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參數(shù)資料
| 型號： | HAT1054R |
| 元件分類： | JFETs |
| 英文描述： | 6 A, 20 V, 0.05 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SOP-8 |
| 文件頁數(shù)： | 4/10頁 |
| 文件大?。?/td> | 55K |
| 代理商： | HAT1054R |
HAT1054R
3
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
–20
—
V
I
D = –10mA, VGS = 0
Gate to source breakdown
voltage
V
(BR)GSS
±12
——V
I
G = ±100A, VDS = 0
Gate to source leak current
I
GSS
——
±10
AV
GS = ±10V, VDS = 0
Zero gate voltege drain current I
DSS
——
–1
AV
DS = –20 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
–0.4
—
–1.4
V
DS = –10V, I D = –1mA
Static drain to source on state
R
DS(on)
—2430m
I
D =–3A,VGS =–4.5V
Note4
resistance
R
DS(on)
—3550m
I
D =–3A,VGS =–2.5V
Note4
Forward transfer admittance
|y
fs|
6
10
—
S
I
D = –3A,VDS = –10V
Note4
Input capacitance
Ciss
—
1550
—
pF
V
DS = –10V
Output capacitance
Coss
—
400
—
pF
V
GS = 0
Reverse transfer capacitance
Crss
—
300
—
pF
f = 1MHz
Total gate charge
Qg
—
18
—
nc
V
DD = –10 V
Gate to source charge
Qgs
—
3
—
nc
V
GS = –4.5 V
Gate to drain charge
Qgd
—
6.5
—
nc
I
D = –6 A
Turn-on delay time
t
d(on)
—
25
—
ns
V
GS = –4.5V, ID = –3A
Rise time
t
r
—
50
—
ns
V
DD –10V
Turn-off delay time
t
d(off)
—
85
—
ns
R
L = 3.3
Fall time
t
f
—
40
—
ns
R
g = 4.7
Body–drain diode forward
voltage
V
DF
—
-0.85
-1.10
V
IF = –6A, V
GS = 0
Note4
Body–drain diode reverse
recovery time
t
rr
—
60
—
ns
IF = –6A, V
GS = 0
diF/ dt =20A/s
Note:
4. Pulse test
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