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參數(shù)資料
| 型號： | HAT1054R |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon P Channel Power MOS FET(P溝道功率MOSFET) |
| 中文描述： | 硅P通道功率MOS FET性（P溝道功率MOSFET的） |
| 文件頁數(shù)： | 3/5頁 |
| 文件大?。?/td> | 31K |
| 代理商： | HAT1054R |
HAT1054R
3
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
–20
—
—
V
I
D
= –10mA, V
GS
= 0
Gate to source breakdown
voltage
V
(BR)GSS
±12
—
—
V
I
G
= ±100
μ
A, V
DS
= 0
Gate to source leak current
I
GSS
I
DSS
—
—
±10
μ
A
μ
A
V
GS
= ±10V, V
DS
= 0
V
DS
= –20 V, V
GS
= 0
Zero gate voltege drain
current
—
—
–1
Gate to source cutoff voltage V
GS(off)
Static drain to source on state R
DS(on)
resistance
–0.4
—
–1.4
V
m
m
S
V
DS
= –10V,
I
D
= –1mA
I
D
=–3A,V
GS
=–4.5V
I
D
=–3A,V
GS
=–2.5V
I
D
= –3A,V
DS
= –10V
V
DS
= –10V
V
GS
= 0
f = 1MHz
—
(24)
30
Note4
R
DS(on)
|y
fs
|
Ciss
—
(35)
50
Note4
Forward transfer admittance
(6)
(10)
—
Note4
Input capacitance
—
(1550)
—
pF
Output capacitance
Coss
—
(400)
—
pF
Reverse transfer capacitance Crss
—
(300)
—
pF
Total gate charge
Qg
—
(19)
—
nc
V
DD
= –10 V
V
GS
= –4.5 V
I
D
= –6 A
V
GS
= –4.5V, I
D
= –3A
V
DD
=
–10V
R
L
= 3.3
R
g
= 4.7
IF = –6A, V
GS
= 0
Gate to source charge
Qgs
—
(3)
—
nc
Gate to drain charge
Qgd
—
(7)
—
nc
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
V
DF
—
(14)
—
ns
Rise time
—
(60)
—
ns
Turn-off delay time
—
(170)
—
ns
Fall time
—
(150)
—
ns
Body–drain diode forward
voltage
—
(–0.85)
(–1.11)
V
Note4
Body–drain diode reverse
recovery time
Note:
4. Pulse test
t
rr
—
(60)
—
ns
IF = –6A, V
GS
= 0
diF/ dt =20A/μs
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