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參數(shù)資料
| 型號： | HAT1038R |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon P Channel Power MOS FET(P溝道功率MOSFET) |
| 中文描述： | 硅P通道功率MOS FET性（P溝道功率MOSFET的） |
| 文件頁數(shù)： | 2/9頁 |
| 文件大?。?/td> | 170K |
| 代理商： | HAT1038R |
HAT1038R/HAT1038RJ
2
Note: 1. PW
≤
10
μ
s, duty cycle
≤
1 %
2. 1 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW
≤
10 s
3. 2 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW
≤
10 s
4. Value at Tch = 25
°
C, Rg
≥
50
Electrical Characteristics (Ta = 25
°
C)
Note: 5. Pulse test
Avalanche current
HAT1038R
HAT1038RJ
HAT1038R
HAT1038RJ
I
AP Note4
—
– 3.5
—
1.05
2
3
150
– 55 to + 150
—
A
—
mJ
W
W
°
C
°
C
Avalanche energy
E
AR Note4
Channel dissipation
Channel dissipation
Channel temperature
Storage temperature
Pch
Note2
Pch
Note3
Tch
Tstg
Item
Drain to source breakdown voltage
Symbol Min
V
(BR)DS
S
V
(BR)GS
S
I
GSS
I
DSS
Typ
—
Max
—
Unit
V
Test Conditions
I
D
= – 10 mA, V
GS
= 0
– 60
Gate to source breakdown voltage
±
20
—
—
V
I
G
=
±
100
μ
A, V
DS
= 0
Gate to source leak current
Zero gate voltage
drain current
Zero gate voltage
drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
—
—
—
—
—
– 1.2
—
—
—
—
—
—
—
0.12
±
10
– 1
– 0.1
—
–10
– 2.2
0.15
μ
A
μ
A
μ
A
μ
A
μ
A
V
V
GS
=
±
16 V, V
DS
= 0
V
DS
= – 60 V, V
GS
= 0
HAT1038R
HAT1038RJ I
DSS
HAT1038R
HAT1038RJ I
DSS
I
DSS
V
DS
= – 48 V, V
GS
= 0
Ta=125
°
C
V
DS
= – 10 V,
I
D
= – 1 mA
I
= – 2 A, V
GS
= – 10 V
D
V
GS(off)
R
DS(on)
R
DS(on)
|y
fs
|
—
3
0.16
4.5
0.23
—
S
I
D
= – 2 A, V
GS
= – 4 V
Note5
I
= – 2 A, V
DS
= – 10 V
D
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse
recovery time
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
—
—
—
—
—
—
—
—
—
600
290
75
11
30
100
55
– 0.98
70
—
—
—
—
—
—
—
– 1.28 V
—
pF
pF
pF
ns
ns
ns
ns
V
DS
= –10 V
V
GS
= 0
f = 1MHz
V
GS
= –10 V, I
D
= – 2 A
V
DD
@ – 30 V
IF = – 3. 5 A, V
GS
= 0
Note5
IF = – 3. 5 A, V
GS
= 0
diF/ dt = 50A/
μ
s
ns
Item
Symbol
Ratings
Unit
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HAT1038R/HAT1038RJ | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
| HAT1038R_09 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel Power MOS FET High Speed Power Switching |
| HAT1038R-EL-E | 制造商:Renesas Electronics 功能描述:Trans MOSFET P-CH 60V 3.5A 8-Pin SOP T/R 制造商:Renesas 功能描述:Trans MOSFET P-CH 60V 3.5A 8-Pin SOP T/R |
| HAT1038RJ | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon P Channel Power MOS FET High Speed Power Switching |
| HAT1038RJ-EL-E | 制造商:Renesas Electronics 功能描述:Trans MOSFET P-CH 60V 3.5A 8-Pin SOP T/R 制造商:Renesas 功能描述:Trans MOSFET P-CH 60V 3.5A 8-Pin SOP T/R |
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