參數(shù)資料
型號: HAT1036R
廠商: Hitachi,Ltd.
英文描述: Silicon P Channel Power MOS FET Power Switching
中文描述: 硅P通道功率MOS場效應(yīng)管電源開關(guān)
文件頁數(shù): 3/9頁
文件大?。?/td> 50K
代理商: HAT1036R
HAT1036R
3
Main Characteristics
C
Ambient Temperature Ta (°C)
Power vs. Temperature Derating
Drain to Source Voltage V (V)
D
D
Maximum Safe Operation Area
Drain to Source Voltage V (V)
D
D
Typical Output Characteristics
-10V
Gate to Source Voltage V (V)
GS
D
D
Typical Transfer Characteristics
Note 4 :
When using the glass epoxy board
(FR4 40x40x1.6 mm)
-50
-40
-30
-20
-10
0
-2
-4
-6
-8
-10
-50
-40
-30
-20
-10
0
-1
-2
-3
-4
-5
Tc = 75°C
25°C
–25°C
4.0
3.0
2.0
1.0
0
50
100
150
200
-100
-10
-1
-0.1
-0.01
-0.1
-0.3
-1
-3
-10
-30
-100
Test Condition :
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW < 10 s
V = -10 V
Pulse Test
-500
Ta = 25 °C
1 shot Pulse
PW=10ms
10 μs
100μs
Operation in
this area is
limited by R
DS(on)
Noe4
DCOperaion(PW<10s)
V = -3 V
-4 V
-5 V
Pulse Test
-3.5 V
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