參數(shù)資料
型號: HAT1029R
廠商: Hitachi,Ltd.
英文描述: Silicon P Channel Power MOS FET High Speed Power Switching
中文描述: 硅P通道功率MOS FET的高速電源開關(guān)
文件頁數(shù): 5/10頁
文件大?。?/td> 53K
代理商: HAT1029R
HAT1029R
5
Gate to Source Voltage V (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
V
D
D
Drain Current I (A)
D
R
D
Static Drain to Source on State Resistance
vs. Drain Current
1
Case Temperature Tc (
°
C)
R
D
S
Static Drain to Source on State Resistance
vs. Temperature
0.5
F
f
Forward Transfer Admittance vs.
Drain Current
Drain Current I (A)
–0.5
–0.4
–0.3
–0.2
–0.1
0
–2
–4
–6
–8
–10
–0.5 A
I = –2 A
–1 A
0.2
0.5
0.1
0.02
0.05
0.01
–0.2
–0.5
–1
–2
–5
–10
–40
0
40
80
120
160
0.4
0.3
0.2
0.1
0
–2 A, –1 A, –0.5 A
–4 V
V = –2.5 V
–1 A
I = –2 A
20
10
2
5
1
0.2
0.5
–0.1
–4 V
V = –2.5 V
–0.5 A
–0.2
–0.5
–1
–2
–5
–10
–0.1
Tc = –25
°
C
75
°
C
25
°
C
V = –10 V
Pulse Test
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