參數(shù)資料
型號(hào): HAT1021
廠商: Hitachi,Ltd.
英文描述: Silicon P Channel Power MOS FET High Speed Power Switching
中文描述: 硅P通道功率MOS FET的高速電源開(kāi)關(guān)
文件頁(yè)數(shù): 2/9頁(yè)
文件大?。?/td> 51K
代理商: HAT1021
HAT1021R
2
Absolute Maximum Ratings
(Ta = 25
°
C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
V
GSS
I
D
I
D(pulse)
– 20
V
Gate to source voltage
±
10
V
Drain current
– 5.5
A
Drain peak current
Note1
– 44
A
Body–drain diode reverse drain current I
DR
Channel dissipation
– 5.5
A
Pch
Note2
2.5
W
Channel temperature
Tch
150
°
C
°
C
Storage temperature
Note:
1. PW
10
μ
s, duty cycle
1 %
2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW
10s
Tstg
–55 to +150
Electrical Characteristics
(Ta = 25
°
C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V
(BR)DSS
Gate to source breakdown voltage V
(BR)GSS
Gate to source leak current
– 20
V
I
D
= – 10 mA, V
GS
= 0
I
G
=
±
100
μ
A, V
DS
= 0
V
GS
=
±
8 V, V
DS
= 0
V
DS
= – 20 V, V
GS
= 0
V
DS
= –10 V,
I
D
= – 1 mA
I
D
= – 3 A, V
GS
= – 4 V
Note3
I
D
= – 3 A, V
GS
= – 2.5 V
Note3
I
D
= – 3 A, V
DS
= – 10 V
Note3
V
DS
= – 10 V
V
GS
= 0
f = 1MHz
±
10
V
I
GSS
I
DSS
V
GS(off)
R
DS(on)
R
DS(on)
|y
fs
|
Ciss
±
10
μ
A
μ
A
Zero gate voltege drain current
– 10
Gate to source cutoff voltage
– 0.5
– 1.5
V
Static drain to source on state
0.048
0.060
resistance
0.065
0.085
Forward transfer admittance
6
9.5
S
Input capacitance
1200
pF
Output capacitance
Coss
630
pF
Reverse transfer capacitance
Crss
200
pF
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
20
ns
V
GS
= – 4 V, I
D
= – 3 A
V
DD
– 10 V
Rise time
120
ns
Turn-off delay time
175
ns
Fall time
140
ns
Body–drain diode forward voltage
– 0.9
– 1.4
V
IF = – 5.5 A, V
GS
= 0
Note3
IF = – 5.5 A, V
GS
= 0
diF/ dt = 20 A/
μ
s
Body–drain diode reverse
recovery time
Note:
3. Pulse test
65
ns
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