參數(shù)資料
型號(hào): HAL815PA-T
廠商: MICRONAS SEMICONDUCTOR HOLDING AG
英文描述: Programmable Linear Hall Sensor
中文描述: 可編程線性霍爾傳感器
文件頁(yè)數(shù): 14/24頁(yè)
文件大小: 407K
代理商: HAL815PA-T
HAL815
ADVANCE INFORMATION
14
Micronas
3.7. Magnetic Characteristics
at T
J
=
40 °C to +170 °C, V
DD
= 4.5 V to 5.5 V, after programming, as not otherwise specified in Conditions.
Typical Characteristics for T
J
= 25 °C and V
DD
= 5 V.
3.8. Open-Circuit Detection
at T
J
=
40 °C to +170 °C, Typical Characteristics for T
J
= 25 °C
3.9. Overvoltage and Undervoltage Detection
at T
J
=
40 °C to +170 °C, Typical Characteristics for T
J
= 25 °C
Symbol
Parameter
Pin No.
Min.
Typ.
Max.
Unit
Test Conditions
B
Offset
Magnetic Offset
3
1
0
1
mT
B = 0 mT, I
OUT
= 0 mA, T
J
= 25 °C
B
Offset
/
T
Magnetic Offset Change
due to T
J
15
0
15
μ
T/K
B = 0 mT, I
OUT
= 0 mA
B
Hysteresis
Magnetic Hysteresis
20
0
20
μ
T
Range = 30 mT, Filter = 500 Hz
SR
Magnetic Slew Rate
3
2
4
12
25
50
mT/ms
Filter frequency = 80 Hz
Filter frequency = 160 Hz
Filter frequency = 500 Hz
Filter frequency = 1 kHz
Filter frequency = 2 kHz
n
meff
Magnetic RMS Broadband
Noise
3
10
μ
T
BW = 10 Hz to 2 kHz
f
Cflicker
Corner Frequency of 1/f Noise
3
20
Hz
B = 0 mT
f
Cflicker
Corner Frequency of 1/frms
Noise
3
100
Hz
B = 65 mT, T
J
= 25 °C
Symbol
Parameter
Pin No.
Min.
Typ.
Max.
Unit
Test Conditions
V
OUT
Output voltage
at open V
DD
line
3
0
0
0.2
V
V
DD
= 5 V
R
L
= 10 k
to GND
V
OUT
Output voltage at
open GND line
3
4.7
4.8
5
V
V
DD
= 5 V
R
L
= 10 k
to GND
Symbol
Parameter
Pin No.
Min.
Typ.
Max.
Unit
Test Conditions
V
DD,UV
Undervoltage detection level
1
3.5
3.8
4.1
V
1)
V
DD,OV
Overvoltage detection level
1
8.5
9.2
10.0
V
1)
1)
If the supply voltage drops below V
DD,UV
or rises above V
DD,OV
, the output voltage is switched to V
DD
(
94% of V
DD
at R
L
= 10 k
to GND).
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