參數(shù)資料
型號(hào)： HAL815E
廠商： MICRONAS SEMICONDUCTOR HOLDING AG
英文描述： Programmable Linear Hall Sensor
中文描述： 可編程線性霍爾傳感器
文件頁(yè)數(shù)： 18/24頁(yè)
文件大?。?/td> 407K
代理商： HAL815E
HAL815
ADVANCE INFORMATION
18
Micronas
4.4. Undervoltage Behavior
In a voltage range below 4.5 V to approximately 3.5 V,
the operation of the HAL 815 is typically given and pre-
dictable for the most sensors. Some of the parameters
may be out of the specification. Below about 3.5 V, the
digital processing is reset. If the supply voltage once
again rises above about 3.5 V, a startup time of about
20
μ
s elapses for the digital processing to occur. As
long as the supply voltage is still above about 2.8 V,
the analog output is kept at its last valid value ratiomet-
ric to V
DD
. Below about 2.5 V, the entire sensor will
reset.
4.5. Ambient Temperature
Due to the internal power dissipation, the temperature
on the silicon chip (junction temperature T
J
) is higher
than the temperature outside the package (ambient
temperature T
A
).
T
J
= T
A
+
T
At static conditions, the following equation is valid:
T = I
DD
* V
DD
* R
thJA
For typical values, use the typical parameters. For
worst case calculation, use the max. parameters for
I
DD
and R
th
, and the max. value for V
DD
from the appli-
cation.
For V
DD
= 5.5 V, R
th
= 200 K/W and I
DD
= 10 mA the
temperature difference
T = 11 K.
For all sensors, the junction temperature T
J
is speci-
fied. The maximum ambient temperature T
Amax
can be
calculated as:
T
Amax
= T
Jmax
T
4.6. EMC and ESD
The HAL 815 is designed for a stabilized 5 V supply.
Interferences and disturbances conducted along the
12 V onboard system (product standards DIN40839
part 1 or ISO 7637 part 1) are not relevant for these
applications.
For applications with disturbances by capacitive or
inductive coupling on the supply line or radiated distur-
bances, the application circuit shown in Fig. 4–1 is rec-
ommended. Applications with this arrangement
passed the EMC tests according to the product stan-
dards DIN 40839 part 3 (Electrical transient transmis-
sion by capacitive or inductive coupling) and part 4
(Radiated disturbances).
Please contact Micronas for the detailed investigation
reports with the EMC and ESD results.
810
0
15
860
1
16
910
2
16
960
3
16
1020
4
17
1070
5
17
1120
6
17
1180
7
18
1250
8
18
1320
9
19
1380
10
19
1430
11
20
1500
12
20
1570
13
20
1640
14
21
1710
15
21
1780
16
22
1870
17
22
1950
18
23
2030
19
23
2100
20
24
2180
21
24
2270
22
25
2420
24
26
2500
25
27
2600
26
27
2700
27
28
2800
28
28
2900
29
29
3000
30
30
3100
31
31
Temperature
Coefficient of
Magnet (ppm/K)
TC
TCSQ
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