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| 型號(hào)： | HAL700SF-E |
| 廠商： | MICRONAS SEMICONDUCTOR HOLDING AG |
| 元件分類： | 磁阻傳感器 |
| 英文描述： | Dual Hall-Effect Sensor with Independent Outputs |
| 中文描述： | MAGNETIC FIELD SENSOR-HALL EFFECT, 3.5-16mT, 0.13-0.28V, RECTANGULAR, SURFACE MOUNT |
| 封裝： | PLASTIC, SOT-89B, 4 PIN |
| 文件頁(yè)數(shù)： | 5/12頁(yè) |
| 文件大?。?/td> | 167K |
| 代理商： | HAL700SF-E |
ADVANCE INFORMATION
HAL700
Micronas
5
2. Functional Description
The HAL 700 is a monolithic integrated circuit with two
independent subblocks consisting each of a Hall plate
and the corresponding comparator. Each subblock
independently switches the comparator output in
response to the magnetic field at the location of the
corresponding sensitive area. If a magnetic field with
flux lines perpendicular to the sensitive area is
present, the biased Hall plate generates a Hall voltage
proportional to this field. The Hall voltage is compared
with the actual threshold level in the comparator. The
subblocks are designed to have closely matched
switching points. The output of comparator 1 attached
to S1 controls the open drain output at Pin 3. Pin 2 is
set according to the state of comparator 2 connected
to S2.
The temperature-dependent bias
–
common to both
subblocks
–
increases the supply voltage of the Hall
plates and adjusts the switching points to the decreas-
ing induction of magnets at higher temperatures. If the
magnetic field exceeds the threshold levels, the com-
parator switches to the appropriate state. The built-in
hysteresis prevents oscillations of the outputs.
In order to achieve good matching of the switching
points of both subblocks, the magnetic offset caused
by mechanical stress is compensated for by use of
“
switching offset compensation techniques
”
. Therefore,
an internal oscillator provides a two-phase clock to
both subblocks. For each subblock, the Hall voltage is
sampled at the end of the first phase. At the end of the
second phase, both sampled and actual Hall voltages
are averaged and compared with the actual switching
point.
Shunt protection devices clamp voltage peaks at the
Output-pins and V
DD
-pin together with external series
resistors. Reverse current is limited at the V
DD
-pin by
an internal series resistor up to
15 V. No external
reverse protection diode is needed at the V
DD
-pin for
reverse voltages ranging from 0 V to
15 V.
Fig. 2
–
1:
Timing diagram
Fig. 2
–
2:
HAL 700 block diagram
t
Clock
t
B
S1
t
B
S2
t
Pin 2
t
Pin 3
t
I
DD
B
S1on
B
S2on
V
OH
V
OL
V
OH
V
OL
1/f
osc
t
f
t
f
Reverse
Voltage and
Overvoltage
Protection
Temperature
Dependent
Bias
Hysteresis
Control
Hall Plate 1
Switch
Comparator
GND
4
1
V
DD
Hall Plate 2
Switch
Comparator
Clock
Output
3
S1-Output
Output
2
S2-Output
Short Circuit
and
Overvoltage
Protection
S1
S2
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HAL700SF-K | Dual Hall-Effect Sensor with Independent Outputs |
| HAL710SF-E | Chip-on-Glass (COG) Technology, 16 Characters x 2 Lines |
| HAL710SF-K | Chip-on-Glass (COG) Technology, 16 Characters x 2 Lines |
| HAL710 | Hall-Effect Sensor with Direction Detection |
| HAL800 | Programmable Linear Hall Effect Sensor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HAL700SF-K | 制造商:MICRONAS 制造商全稱:MICRONAS 功能描述:Dual Hall-Effect Sensor with Independent Outputs |
| HAL710 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Hall-Effect Sensor with Direction Detection |
| HAL710_1 | 制造商:MICRONAS 制造商全稱:MICRONAS 功能描述:Hall-Effect Sensors with Direction Detection |
| HAL710_2 | 制造商:MICRONAS 制造商全稱:MICRONAS 功能描述:Hall-Effect Sensors with Direction Detection |
| HAL710SF-E | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Hall-Effect Sensor with Direction Detection |
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