參數(shù)資料
型號(hào): HAL700
廠商: MICRONAS SEMICONDUCTOR HOLDING AG
英文描述: Dual Hall-Effect Sensor with Independent Outputs
中文描述: 雙霍爾效應(yīng)傳感器獨(dú)立的輸出
文件頁(yè)數(shù): 8/12頁(yè)
文件大?。?/td> 167K
代理商: HAL700
HAL700
ADVANCE INFORMATION
8
Micronas
3.6. Electrical Characteristics
at T
J
=
40
°
C to +140
°
C, V
DD
= 3.8 V to 24 V, as not otherwise specified in Conditions.
Typical Characteristics for T
J
= 25
°
C and V
DD
= 5 V.
Fig. 3
2:
Recommended pad sizes for SOT-89B
Dimensions in mm
Symbol
Parameter
Pin No.
Min.
Typ.
Max.
Unit
Conditions
I
DD
Supply Current
1
2
5.5
9
mA
T
J
= 25
°
C
I
DD
Supply Current
over Temperature Range
1
7
10
mA
V
DDZ
Overvoltage Protection
at Supply
1
28.5
32
V
I
DD
= 25 mA, T
J
= 25
°
C, t = 20 ms
V
OZ
Overvoltage Protection
at Output
2, 3
28
32
V
I
OH
= 25 mA, T
J
= 25
°
C, t = 20 ms
V
OL
Output Voltage
2, 3
130
280
mV
I
OL
= 10 mA, T
J
= 25
°
C
V
OL
Output Voltage over
Temperature Range
2, 3
130
400
mV
I
OL
= 10 mA,
I
OH
Output Leakage Current
2, 3
0.06
0.1
μ
A
Output switched off, T
J
= 25
°
C,
V
OH
= 3.8 V to 24 V
I
OH
Output Leakage Current over
Temperature Range
2, 3
10
μ
A
Output switched off, T
J
140
°
C,
V
OH
= 3.8 V to 24 V
f
osc
Internal sampling frequency
130
150
kHz
T
J
= 25
°
C
f
osc
Internal sampling frequency
over Temperature Range
100
150
kHz
t
en
(O)
Enable Time of Output after
Setting of V
DD
50
100
μ
s
V
DD
= 12 V,
B>B
on
+ 2 mT or B<B
off
2 mT
t
r
Output Rise Time
2, 3
1.2
μ
s
V
DD
= 12 V, R
L
= 20 k
,
C
L
= 20 pF
t
f
Output FallTime
2, 3
0.2
1.6
μ
s
V
DD
= 12 V, R
L
= 20 k
,
C
L
= 20 pF
R
thSB
SOT-89B
Thermal Resistance Junction to
Substrate Backside
150
200
K/W
Fiberglass Substrate
30 mm x 10mm x 1.5mm,
pad size see Fig. 3
2
5.0
2.0
2.0
1.0
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