參數(shù)資料
型號: HAL566UA-K
廠商: MICRONAS SEMICONDUCTOR HOLDING AG
元件分類: 霍爾效應(yīng)傳感器
英文描述: Two-Wire Hall Effect Sensor Family
中文描述: 雙線霍爾效應(yīng)傳感器系列
文件頁數(shù): 19/21頁
文件大小: 231K
代理商: HAL566UA-K
HAL55x, HAL56x
19
Micronas
5.4. Ambient Temperature
Due to internal power dissipation, the temperature on
the silicon chip (junction temperature T
J
) is higher than
the temperature outside the package (ambient tempera-
ture T
A
).
T
J
= T
A
+
T
At static conditions and continuous operation, the follow-
ing equation is valid:
T = I
DD
* V
DD
* R
th
For all sensors, the junction temperature range T
J
is
specified. The maximum ambient temperature T
Amax
can be calculated as:
T
Amax
= T
Jmax
T
For typical values, use the typical parameters. For worst
case calculation, use the max. parameters for I
DD
and
R
th
, and the max. value for V
DD
from the application.
Due to the range of I
DDhigh
, self-heating can be critical.
The junction temperature can be reduced with pulsed
supply voltage. For supply times (t
on
) ranging from 30
μ
s
to 1 ms, the following equation can be used:
T
I
DD
* V
DD
* R
th
*
t
on
t
off
t
on
5.5. EMC and ESD
For applications with disturbances on the supply line or
radiated disturbances, a series resistor and a capacitor
are recommended (see Fig. 5–2). The series resistor
and the capacitor should be placed as closely as pos-
sible to the HAL sensor.
Applications with this arrangement passed the EMC
tests according to the product standards DIN 40839.
Note:
The international standard ISO 7637 is similar to
the product standard DIN 40839.
Please contact Micronas for the detailed investigation
reports with the EMC and ESD results.
4.7 nF
V
EMC
R
V1
100
GND
2
1 V
DD
NC
R
V2
30
Fig. 5–3:
Recommended EMC test circuit
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