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參數資料
| 型號： | HAL566UA-A |
| 廠商： | MICRONAS SEMICONDUCTOR HOLDING AG |
| 元件分類： | 磁阻傳感器 |
| 英文描述： | Two-Wire Hall Effect Sensor Family |
| 中文描述： | MAGNETIC FIELD SENSOR-HALL EFFECT, 46-52mT, RECTANGULAR, THROUGH HOLE MOUNT |
| 封裝： | PLASTIC, TO-92UA, 3 PIN |
| 文件頁數： | 5/21頁 |
| 文件大小： | 231K |
| 代理商： | HAL566UA-A |
HAL55x, HAL56x
5
Micronas
2. Functional Description
The HAL55x, HAL56x two-wire sensors are monolithic
integrated circuits which switch in response to magnetic
fields. If a magnetic field with flux lines perpendicular to
the sensitive area is applied to the sensor, the biased
Hall plate forces a Hall voltage proportional to this field.
The Hall voltage is compared with the actual threshold
level in the comparator. The temperature-dependent
bias increases the supply voltage of the Hall plates and
adjusts the switching points to the decreasing induction
of magnets at higher temperatures.
If the magnetic field exceeds the threshold levels, the
current source switches to the corresponding state. In
the low current consumption state, the current source is
switched off and the current consumption is caused only
by the current through the Hall sensor. In the high current
consumption state, the current source is switched on
and the current consumption is caused by the current
through the Hall sensor and the current source. The
built-in hysteresis eliminates oscillation and provides
switching behavior of the output signal without bounc-
ing.
Magnetic offset caused by mechanical stress is com-
pensated for by using the “switching offset compensa-
tion technique”. An internal oscillator provides a two-
phase clock. In each phase, the current is forced through
the Hall plate in a different direction, and the Hall voltage
is measured. At the end of the two phases, the Hall volt-
ages are averaged and thereby the offset voltages are
eliminated. The average value is compared with the
fixed switching points. Subsequently, the current con-
sumption switches to the corresponding state. The
amount of time elapsed from crossing the magnetic
switching level to switching of the current level can vary
between zero and 1/f
osc
.
Shunt protection devices clamp voltage peaks at the
V
DD
-pin together with external series resistors. Reverse
current is limited at the V
DD
-pin by an internal series
resistor up to –15 V. No external protection diode is
needed for reverse voltages ranging from 0 V to –15 V.
Fig. 2–1:
HAL55x, HAL56x block diagram
Temperature
Dependent
Bias
Switch
Hysteresis
Control
Comparator
Current
Source
V
DD
1
Clock
Hall Plate
GND
2
HAL55x, HAL56x
Reverse
Voltage &
Overvoltage
Protection
t
I
DDlow
I
DD
I
DDhigh
1/f
osc
= 6.9
μ
s
B
B
OFF
B
ON
f
osc
t
t
t
I
DD
Fig. 2–2:
Timing diagram (example: HAL56x)
相關PDF資料 |
PDF描述 |
|---|---|
| HAL566UA-E | Two-Wire Hall Effect Sensor Family |
| HAL566UA-K | Two-Wire Hall Effect Sensor Family |
| HAL571 | Two-Wire Hall Effect Sensor Family |
| HAL573 | Two-Wire Hall Effect Sensor Family |
| HAL574 | Two-Wire Hall Effect Sensor Family |
相關代理商/技術參數 |
參數描述 |
|---|---|
| HAL566UA-C | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Hall-Effect Switch |
| HAL566UA-E | 制造商:MICRONAS 制造商全稱:MICRONAS 功能描述:Two-Wire Hall Effect Sensor Family |
| HAL566UA-K | 制造商:MICRONAS 制造商全稱:MICRONAS 功能描述:Two-Wire Hall Effect Sensor Family |
| HAL571 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Two-Wire Hall Effect Sensor Family |
| HAL573 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Two-Wire Hall Effect Sensor Family |
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