參數(shù)資料
型號(hào): HAL566SF-E
廠商: MICRONAS SEMICONDUCTOR HOLDING AG
元件分類: 霍爾效應(yīng)傳感器
英文描述: Two-Wire Hall Effect Sensor Family
中文描述: 雙線霍爾效應(yīng)傳感器系列
文件頁(yè)數(shù): 7/21頁(yè)
文件大?。?/td> 231K
代理商: HAL566SF-E
HAL55x, HAL56x
7
Micronas
3.4. Absolute Maximum Ratings
Symbol
Parameter
Pin No.
Min.
Max.
Unit
V
DD
Supply Voltage
1
–15
1) 2)
28
2)
V
I
DDZ
Supply Current through
Protection Device
1
–50
2)
–200
3)
50
2)
200
3)
mA
mA
T
S
Storage Temperature Range
–65
150
°
C
T
J
Junction Temperature Range
–40
–40
150
170
4)
°
C
1)
–18 V with a 100
series resistor at pin 1 (–16 V with a 30
series resistor)
2)
as long as T
J
max
is not exceeded
2)
with a 220
series resistance at pin 1 corresponding to test circuit 1 (see Fig. 5–3)
3)
t<2 ms
4)
t<1000 h
Stresses beyond those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device. This
is a stress rating only. Functional operation of the device at these or any other conditions beyond those indicated in the
“Recommended Operating Conditions/Characteristics” of this specification is not implied. Exposure to absolute maxi-
mum ratings conditions for extended periods may affect device reliability.
3.5. Recommended Operating Conditions
Symbol
Parameter
Pin No.
Min.
Max.
Unit
V
DD
Supply Voltage
1
4
24
V
T
A
Ambient Temperature for continuos
operation
–40
–40
85
1)
125
2)
°
C
°
C
t
on
Supply Time for pulsed mode
30
μ
s
1)
when using the “A” type or the ”K” type and V
DD
16 V
2)
when using the “A” type and V
DD
13.2 V
Note:
Due to the high power dissipation at high current consumption, there is a difference between the ambient temper-
ature (T
A
) and junction temperature. The power dissipation can be reduced by repeatedly switching the supply voltage
on and off (pulse mode). Please refer to section 5.4. on page 19 for details.
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