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| 型號： | HAL535SF-E |
| 廠商： | Electronic Theatre Controls, Inc. |
| 元件分類： | 霍爾效應(yīng)傳感器 |
| 英文描述： | Hall Effect Sensor IC |
| 中文描述： | 霍爾效應(yīng)傳感器IC |
| 文件頁數(shù)： | 3/21頁 |
| 文件大?。?/td> | 292K |
| 代理商： | HAL535SF-E |
HAL525, HAL535
Micronas
3
Hall Effect Sensor Family
Release Note: Revision bars indicate significant
changes to the previous edition.
1. Introduction
The HAL525 and HAL535 are Hall switches produced
in CMOS technology. The sensors include a tempera-
ture-compensated Hall plate with active offset com-
pensation, a comparator, and an open-drain output
transistor. The comparator compares the actual mag-
netic flux through the Hall plate (Hall voltage) with the
fixed reference values (switching points). Accordingly,
the output transistor is switched on or off.
The active offset compensation leads to magnetic
parameters which are robust against mechanical
stress effects. In addition, the magnetic characteristics
are constant in the full supply voltage and temperature
range.
The sensors are designed for industrial and automo-
tive applications and operate with supply voltages
from 3.8 V to 24 V in the ambient temperature range
from
40
°
C up to 150
°
C.
The HAL525 and HAL535 are available in the
SMD-package SOT-89B and in the leaded version
TO-92UA.
1.1. Features
– switching offset compensation at typically 115 kHz
– operates from 3.8 V to 24 V supply voltage
– operates with static magnetic fields and dynamic
magnetic fields up to 10 kHz
– overvoltage protection at all pins
– reverse-voltage protection at V
DD
-pin
– magnetic characteristics are robust against
mechanical stress effects
– short-circuit protected open-drain output by thermal
shut down
– constant switching points over a wide supply voltage
range
– the decrease of magnetic flux density caused by ris-
ing temperature in the sensor system is compen-
sated by a built-in negative temperature coefficient
of the magnetic characteristics
– ideal sensor for window lifter, ignition timing, and
revolution counting in extreme automotive and
industrial environments
– EMC corresponding to DIN 40839
1.2. Family Overview
Both sensors have a latching behavior with typically
the same sensitivity. The difference between HAL 525
and HAL535 is the temperature coefficient of the mag-
netic switching points.
Latching Sensors:
Both sensors have a latching behavior and requires a
magnetic north and south pole for correct functioning.
The output turns low with the magnetic south pole on
the branded side of the package and turns high with
the magnetic north pole on the branded side. The out-
put does not change if the magnetic field is removed.
For changing the output state, the opposite magnetic
field polarity must be applied.
Type
Switching
Behavior
Typical
Temperature
Coefficient
see
Page
525
latching
2000 ppm/K
14
535
latching
1000 ppm/K
16
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HAL535SF-K | Hall Effect Sensor IC |
| HAL535UA-A | Hall Effect Sensor IC |
| HAL535UA-E | Hall Effect Sensor IC |
| HAL535UA-K | Hall Effect Sensor IC |
| HAL525UA-A | OSC 5V SMT 7X5 CMOS PROGRM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HAL535SF-K | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Hall Effect Sensor IC |
| HAL535UA-A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Hall Effect Sensor IC |
| HAL535UA-E | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Hall Effect Sensor IC |
| HAL535UA-K | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Hall Effect Sensor IC |
| HAL542SF-E | 制造商:MICRONAS 制造商全稱:MICRONAS 功能描述:Hall-Effect Sensor Family |
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