參數(shù)資料
型號(hào)： HAL517E
廠商： Electronic Theatre Controls, Inc.
英文描述： Hall Effect Sensor Family
中文描述： 霍爾效應(yīng)傳感器系列
文件頁(yè)數(shù)： 8/44頁(yè)
文件大?。?/td> 315K
代理商： HAL517E
HAL5xx
8
Micronas
3.6. Electrical Characteristics
at T
J
=
–
40
°
C to +170
°
C , V
DD
= 3.8 V to 24 V, as not otherwise specified in Conditions
Typical Characteristics for T
J
= 25
°
C and V
DD
= 12 V
Symbol
Parameter
Pin No.
Min.
Typ.
Max.
Unit
Conditions
I
DD
Supply Current
1
2.3
3
4.2
mA
T
J
= 25
°
C
I
DD
Supply Current over
Temperature Range
1
1.6
3
5.2
mA
V
DDZ
Overvoltage Protection
at Supply
1
–
28.5
32
V
I
DD
= 25 mA,
T
J
= 25
°
C,
t = 20 ms
V
OZ
Overvoltage Protection at Output
3
–
28
32
V
I
OH
= 25 mA,
T
J
= 25
°
C,
t = 20 ms
V
OL
Output Voltage
3
–
130
280
mV
I
OL
= 20 mA, T
J
= 25
°
C
V
OL
Output Voltage over
Temperature Range
3
–
130
400
mV
I
OL
= 20 mA
I
OH
Output Leakage Current
3
–
0.06
0.1
μ
A
Output switched off,
T
J
= 25
°
C, V
OH
= 3.8 to 24 V
I
OH
Output Leakage Current over
Temperature Range
3
–
–
10
μ
A
Output switched off,
T
J
≤
150
°
C, V
OH
= 3.8 to 24V
f
osc
Internal Oscillator
Chopper Frequency
–
49
62
–
kHz
T
J
= 25
°
C,
V
DD
= 4.5 V to 24 V
f
osc
Internal Oscillator Chopper Fre-
quency over Temperature Range
–
38
62
–
kHz
t
en(O)
Enable Time of Output after
Setting of V
DD
1
–
30
70
μ
s
V
DD
= 12 V
1)
t
r
Output Rise Time
3
–
75
400
ns
V
DD
= 12 V, R
L
= 820 Ohm,
C
L
= 20 pF
t
f
Output Fall Time
3
–
50
400
ns
V
DD
= 12 V, R
L
= 820 Ohm,
C
L
= 20 pF
R
thJSB
case
SOT-89B
Thermal Resistance Junction
to Substrate Backside
–
–
150
200
K/W
Fiberglass Substrate
30 mm x 10 mm x 1.5mm,
pad size see Fig. 3
–
3
R
thJA
case
TO-92UA
Thermal Resistance Junction
to Soldering Point
–
–
150
200
K/W
1)
B > B
ON
+ 2 mT or B < B
OFF
–
2 mT for HAL50x, B > B
OFF
+ 2 mT or B < B
ON
–
2 mT for HAL51x
Fig. 3
–
3:
Recommended pad size SOT-89B
Dimensions in mm
5.0
2.0
2.0
1.0
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HAL518K Hall Effect Sensor Family
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HAL518K 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Hall Effect Sensor Family
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