HAL5xx
5
Micronas
2. Functional Description
The HAL5xx sensors are monolithic integrated circuits
which switch in response to magnetic fields. If a
magnetic field with flux lines perpendicular to the
sensitive area is applied to the sensor, the biased Hall
plate forces a Hall voltage proportional to this field. The
Hall voltage is compared with the actual threshold level
in the comparator. The temperature-dependent bias
increases the supply voltage of the Hall plates and
adjusts the switching points to the decreasing induction
of magnets at higher temperatures. If the magnetic field
exceeds the threshold levels, the open drain output
switches to the appropriate state. The built-in hysteresis
eliminates oscillation and provides switching behavior of
output without bouncing.
Magnetic offset caused by mechanical stress is com-
pensated for by using the
“
switching offset compensa-
tion technique
”
. Therefore, an internal oscillator pro-
vides a two phase clock. The Hall voltage is sampled at
the end of the first phase. At the end of the second
phase, both sampled and actual Hall voltages are aver-
aged and compared with the actual switching point. Sub-
sequently, the open drain output switches to the ap-
propriate state. The time from crossing the magnetic
switching level to switching of output can vary between
zero and 1/f
osc
.
Shunt protection devices clamp voltage peaks at the
Output-Pin and V
DD
-Pin together with external series
resistors. Reverse current is limited at the V
DD
-Pin by an
internal series resistor up to
–
15 V. No external reverse
protection diode is needed at the V
DD
-Pin for reverse
voltages ranging from 0 V to
–
15 V.
Fig. 2
–
1:
HAL5xx block diagram
HAL5xx
Temperature
Dependent
Bias
Switch
Hysteresis
Control
Comparator
Output
V
DD
1
OUT
3
Clock
Hall Plate
GND
2
Short Circuit &
Overvoltage
Protection
Reverse
Voltage &
Overvoltage
Protection
t
V
OL
V
OUT
V
OH
1/f
osc
= 16
μ
s
Fig. 2
–
2:
Timing diagram
B
B
ON
f
osc
t
t
t
f
t
I
DD