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參數(shù)資料
| 型號(hào)： | HAL115 |
| 廠商： | MICRONAS SEMICONDUCTOR HOLDING AG |
| 英文描述： | Hall Effect Sensor IC |
| 中文描述： | 霍爾效應(yīng)傳感器IC |
| 文件頁數(shù)： | 4/9頁 |
| 文件大?。?/td> | 110K |
| 代理商： | HAL115 |
HAL115
MICRONAS INTERMETALL
4
Absolute Maximum Ratings
Symbol
Parameter
Pin No.
Min.
Max.
Unit
V
DD
Supply Voltage
1
–15
28
1)
V
V
OH
Output Off Voltage
3
–
28
1)
V
I
O
Continuous Output On Current
3
–
20
mA
I
O
Peak Output On Current
3
–
250
2)
mA
–I
DD
Reverse Supply Current
1
25
1)
mA
T
s
Storage Temperature Range
–65
150
°
C
T
J
Junction Temperature Range
–40
150
°
C
1)
as long as T
J
max is not exceeded
2)
t<2 ms
Stresses beyond those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device. This
is a stress rating only. Functional operation of the device at these or any other conditions beyond those indicated in the
“Recommended Operating Conditions/Characteristics” of this specification is not implied. Exposure to absolute maxi-
mum ratings conditions for extended periods may affect device reliability.
Recommended Operating Conditions
Symbol
Parameter
Pin No.
Min.
Typ.
Max.
Unit
V
DD
Supply Voltage
1
4.3
–
24
V
I
O
Continuous Output On Current
3
0
–
12.5
mA
R
S
Series Resistor
1
–
–
270
Electrical Characteristics
at T
J
= –40
°
C to +100
°
C, V
DD
= 4.3 V to 24 V,
Typical Characteristics for T
J
= 25
°
C and V
DD
= 12 V
Symbol
Parameter
Pin No.
Min.
Typ.
Max.
Unit
Test Conditions
V
OL
Output Voltage
3
–
125
250
mV
I
O
= 12.5 mA, T
J
= 25
°
C
V
OL
Output Voltage over
Temperature Range
3
–
125
400
mV
I
O
= 12.5 mA
I
OH
Output Leakage Current
3
–
–
1
μ
A
B < B
OFF
, T
J
= 25
°
C
V
DD
≤
20 V
I
OH
Output Leakage Current over
Temperature Range
3
–
–
10
μ
A
B < B
OFF
I
DD
Supply Current
1
6.5
8.3
11
mA
T
J
= 25
°
C, V
DD
= 12 V
I
DD
Supply Current over
Temperature Range
1
5.5
8.3
12
mA
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相關(guān)代理商/技術(shù)參數(shù) |
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| HAL115SF-C | 制造商:MICRONAS 制造商全稱:MICRONAS 功能描述:Hall Effect Sensor Family |
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