- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄364789 > HAF1003(L) TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 18A I(D) | TO-262VAR PDF資料下載
參數(shù)資料
| 型號(hào)： | HAF1003(L) |
| 英文描述： | TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 18A I(D) | TO-262VAR |
| 中文描述： | 晶體管| MOSFET的| P通道| 60V的五（巴西）直| 18A條（丁）|對(duì)262VAR |
| 文件頁(yè)數(shù)： | 1/10頁(yè) |
| 文件大?。?/td> | 50K |
| 代理商： | HAF1003(L) |
HAF1003(L), HAF1003(S)
Silicon P Channel MOS FET Series
Power Switching
ADE-208-626B (Z)
3rd. Edition
July 2000
This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has
the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down
the gate voltage in case of high junction temperature like applying over power consumption, over current
etc.
Features
Logic level operation (–4 to –6 V Gate drive)
High endurance capability against to the short circuit
Built–in the over temperature shut–down circuit
Latch type shut–down operation (Need 0 voltage recovery)
Outline
Gate resistor
Tempe–
rature
Sencing
Circuit
Latch
Circuit
Gate
Shut–
down
Circuit
D
S
G
LDPAK
1. Gate
2. Drain
3. Source
4. Drain
1
2
3
4
1
2
3
4
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HAF1003(S) | TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 18A I(D) | TO-263AB |
| HAL115S-E | Hall-Effect Switch |
| HAL115UA | Industrial Control IC |
| HAL115UA-C | Hall-Effect Switch |
| HAL115UA-E | Hall-Effect Switch |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HAF1004 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET Series Power Switching |
| HAF1004-90L-E | 制造商:Renesas Electronics 功能描述:Tray 制造商:Renesas 功能描述:0 |
| HAF1004-90S-E | 制造商:Renesas Electronics 功能描述:Tray 制造商:Renesas 功能描述:0 |
| HAF1004L | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET Series Power Switching |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。