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參數(shù)資料
| 型號： | HAF1001 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon P Channel MOS FET Series Power Switching / Over Temperature Shut-down Capability |
| 中文描述： | 硅P通道MOS FET的系列電源開關(guān)/過溫度停業(yè)能力 |
| 文件頁數(shù)： | 2/10頁 |
| 文件大?。?/td> | 53K |
| 代理商： | HAF1001 |
HAF1001
2
Absolute Maximum Ratings
(Ta = 25
°
C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
V
GSS+
V
GSS–
I
D
I
D(pulse)
–60
V
Gate to source voltage
–16
V
Gate to source voltage
3
V
Drain current
–15
A
Drain peak current
Note1
–30
A
Body-drain diode reverse drain current I
DR
Channel dissipation
–15
A
Pch
Note2
50
W
Channel temperature
Tch
150
°
C
°
C
Storage temperature
Note:
1. PW
≤
10
μ
s, duty cycle
≤
1 %
2. Value at Tc = 25
°
C
Tstg
–55 to +150
Typical Operation Characteristics
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Input voltage
V
IH
V
IL
I
IH1
I
IH2
I
IL
I
IH(sd)1
I
IH(sd)2
T
sd
V
OP
–3.5
—
—
V
—
—
–1.2
V
Input current
—
—
–100
μ
A
μ
A
μ
A
Vi = –8V, V
DS
= 0
Vi = –3.5V, V
DS
= 0
Vi = –1.2V, V
DS
= 0
Vi = –8V, V
DS
= 0
Vi = –3.5V, V
DS
= 0
Channel temperature
(Gate non shut down)
—
—
–50
—
—
–1
Input current
—
–0.8
—
mA
(Gate shut down)
—
–0.35
—
mA
Shut down temperature
—
175
—
°
C
Gate operation voltage
–3.5
—
–13
V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HAF1002 | Silicon P Channel MOS FET Series Power Switching |
| HAF1002L | Silicon P Channel MOS FET Series Power Switching |
| HAF1002S | Silicon P Channel MOS FET Series Power Switching |
| HAF2001 | Silicon N-Channel MOS FET Series(N溝道MOSFET) |
| HAF2002 | Silicon N Channel MOS FET Series Power Switching |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HAF1001-90 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET Series Power Switching |
| HAF1001-90-E | 制造商:Renesas Electronics Corporation 功能描述: |
| HAF1002 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET Series Power Switching |
| HAF1002(L) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 15A I(D) | TO-262VAR |
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