參數(shù)資料
型號(hào)： HA16114PJ
廠商： Hitachi,Ltd.
元件分類： 基準(zhǔn)電壓源/電流源
英文描述： RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS
中文描述： 抗輻射高效，5安培開關(guān)穩(wěn)壓器
文件頁(yè)數(shù)： 19/38頁(yè)
文件大?。?/td> 275K
代理商： HA16114PJ
HA16114P/PJ/FP/FPJ, HA16120FP/FPJ
19
V
IN
C
F
R
F
C
L
IC
R
CS
OUT
V
OUT
F.B.
V
TH
(CL)
V
IN
0.2 V
V
IN
Sawtooth wave V
CT
Dead band V
DB
Error output V
E/O
PWM pulse output
(In case of HA16120)
Power MOS FET
drain current (I
)
(dotted line shows
inductor current)
Current limiter
pin (CL)
Inductor
L
Example of step-up circuit
I
D
Determined by L and V
IN
Determined by R
CS
and R
F
Figure 7.6
8. Setting the Overcurrent Detection Threshold
The voltage drop V
TH
at which overcurrent is detected in these ICs is typically 0.2 V. The bias current is
typically 200
μ
A. The power MOS FET peak current value before the current limiter goes into operation is
given as follows.
I
D
=V
TH
(R
F
+ R
CS
)
×
I
BCL
R
CS
Where, V
TH
= V
IN
– V
CL
= 0.2 V, V
CL
is a voltage refered on GND.
Note that R
F
and C
F
form a low-pass filter with a cutoff frequency determined by their RC time constant.
This filter prevents incorrect operation due to current spikes when the power MOS FET is switched on or
off.
R
0.05
V
IN
R
F
240
C
F
I
BCL
G
S
D
V
O
1 k
200 A
+
Detector
output
(internal)
OUT
CL
V
IN
IN(
)
To other
circuitry
1800 pF
+
Note: This circuit is an example for step-down use.
Figure 8.1 Example for Step-Down Use
With the values shown in the diagram, the peak current is:
I
D
=0.2 V
(240
+ 0.05
)
×
200
μ
A
0.05
The filter cutoff frequency is calculated as follows:
= 3.04 A
f
C
=
=
1
2
π
C
F
R
F
1
6.28
×
1800 pF
×
240
= 370 kHz
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