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參數(shù)資料
| 型號： | H8236-07 |
| 廠商： | Hamamatsu Photonics |
| 英文描述： | HPD (HYBRID PHOTO-DETECTOR) MODULES |
| 中文描述： | 卟啉（混合光檢測器）模塊 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 51K |
| 代理商： | H8236-07 |
SPECIFICATIONS
Parameter
H8236-07
160 to 850
420
Multialkali
15
8
0.2
E
Unit
nm
nm
—
%
mm Min.
V/nW
—
—
V dc
mV
k
V Max.
—
—
—
V dc
V dc
—
—
g
Spectral Response
Peak Sensitivity Wavelength
Photocathode Material
Quantum Efficiency
E
Effective Area
Sensitivity
A
Bandwidth
Signal Output
Input Power/Current
Recommended Control
Voltage Range
Signal Connector
Control Connector
Weight
MAXIMUM RATINGS (Absolute Maximum Value)
H8236-40
350 to 720
550
GaAsP(Cs)
40
5
0.7
E
4
380
1
105
6 mV/1 photoelectron
DC to 3.5 MHz
-0.7
1
more than 50
more than 5
-5
Negative
-12 V dc/6 mA
+12 V dc/50 mA
+3 to +8
B
+3.5 to +7.6
CD
BNC-R
12-pin connector (Hirose: HR10A-10R-12P)
Approx. 370
Offset (Typ.)
Noise r.m.s. (Typ.)
Load
Impedance
Maximum Voltage
Polarity
To Pre-amplifier (PIN 2)
To Diode Bias Power Supply (PIN 4)
To High Voltage (PIN 8)
To Diode Bias Voltage (PIN 6)
AC coupled
DC coupled
HPD (HYBRID PHOTO-DETECTOR) MODULES
H8236-07, -40
NOTE:
PIN 2
PIN 4
PIN 8
PIN 6
Input Power
Control Voltage
Operating Ambient Temperature
Operating Humidity
Average Input Light Power
E
Peak Input Light Power
EG
A
at 8 V (or set the HV knob to -8 kV on the front panel of the HPD module power supply C8237) to PIN 8 and 7.5 V (or set the C8237 diode bias
voltage to +150 V) to PIN 6
B
or "-3 kV" to "-8 kV" high voltage on the C8237 front panel
C
or "70 V" to "152 V" diode bias voltage on the C8237 front panel
D
The characteristics of the bias voltage vs. avalanche gain curve of the diode inside are affected by the ambient temperature conditions, and even
under the same ambient temperature conditions resulting curve may differ between diodes from different production lots. Refer to the individual
data sheet
attached
to the module
.
E
at peak sensitivity wavelength
F
without moisture condensation
G
at 3 V (or set the C8237 HV knob to -3 kV) to PIN 8 and 7.5 V (or set the C8237 diode bias voltage to +150 V) to PIN 6. Input light pulse: 50 ns
(FWHM), 200 kHz.
V dc
V dc
V dc
—
°
C
%RH
nW
nW
-12.5
+16
+8.5
D
0 to +40
90
F
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are
subject to change without notice. No patent rights are granted to any of the circuits described herein. 2000 Hamamatsu Photonics K.K
Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office.
FEATURES
G
Able to discriminate multi-photon events
G
Low excess noise
G
High Q.E. from 450 nm to 650 nm (H8236-40)
G
Simple operation
Built-in high voltage power supply and pre-amplifier
G
Low after pulse
APPLICATIONS
G
Photon counting application
G
Low intensity pulse detection
G
Laser scanning microscope
G
Particle counter
PRELIMINARY DATA
OCT. 2000
The HPD (Hybrid Photo-Detector) is a new vacuum photo-detector including a photocathode
and an avalanche diode. The HPD provides a gain of more than 1000 in a single multiplication
process called 'electron bombardment multiplication'. The photoelectrons from the photo-
cathode are accelerated by a strong electric field to hit the avalanche diode and release a
large number of electron-hole pairs corresponding to the acceleration energy. This excellent
first multiplication process enables the HPD to achieve excellent multi-photon energy resolu-
tion. This first multiplication process is followed by the second avalanche mode multiplication
to provide sufficient gain for a variety of applications.
H8236 is an HPD module, containing high voltage power supplies and a pre-amplifier.
PATENT PENDING
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| H8236-40 | 制造商:HAMAMATSU 制造商全稱:Hamamatsu Corporation 功能描述:HPD (HYBRID PHOTO-DETECTOR) MODULES |
| H8237KBCA | 功能描述:金屬膜電阻器 - 透孔 H8 237K 0.1% 50PPM RoHS:否 制造商:IRC 電阻:63.4 kOhms 容差:1 % 功率額定值:100 mW 電壓額定值:200 V 溫度系數(shù):100 PPM / C 端接類型:Axial 工作溫度范圍: 尺寸:2.3 mm Dia. x 6.4 mm L 封裝:Bulk |
| H8237KBDA | 功能描述:金屬膜電阻器 - 透孔 H8 237K 0.1% 25PPM RoHS:否 制造商:IRC 電阻:63.4 kOhms 容差:1 % 功率額定值:100 mW 電壓額定值:200 V 溫度系數(shù):100 PPM / C 端接類型:Axial 工作溫度范圍: 尺寸:2.3 mm Dia. x 6.4 mm L 封裝:Bulk |
| H8237KBDBR | 功能描述:金屬膜電阻器 - 透孔 H8 0.1% 1/4W 237K RoHS:否 制造商:IRC 電阻:63.4 kOhms 容差:1 % 功率額定值:100 mW 電壓額定值:200 V 溫度系數(shù):100 PPM / C 端接類型:Axial 工作溫度范圍: 尺寸:2.3 mm Dia. x 6.4 mm L 封裝:Bulk |
| H8237KBYA | 功能描述:金屬膜電阻器 - 透孔 H8 237K 0.1% 15PPM RoHS:否 制造商:IRC 電阻:63.4 kOhms 容差:1 % 功率額定值:100 mW 電壓額定值:200 V 溫度系數(shù):100 PPM / C 端接類型:Axial 工作溫度范圍: 尺寸:2.3 mm Dia. x 6.4 mm L 封裝:Bulk |
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