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參數(shù)資料
| 型號(hào)： | H7N1004LD |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | Silicon N-Channel MOSFET High-Speed Power Switching |
| 中文描述： | 硅N溝道MOSFET高速電源開(kāi)關(guān) |
| 文件頁(yè)數(shù)： | 5/12頁(yè) |
| 文件大?。?/td> | 109K |
| 代理商： | H7N1004LD |
H7N1004LD, H7N1004LS, H7N1004LM
Rev.6.00, Aug.27.2003, page 5 of 11
1
5
20
100
2
10
50
50
100
200
500
10
20
5
100
80
60
40
20
–25
0
Case Temperature Tc (
°
C)
25
50
75
100 125 150
0
0.01
100
10
100
10
0.1
1
0.01
0.1
Drain Current I (A)
1
Static Drain to Source on State Resistance
vs. Drain Current
25
°
C
Tc = –25
°
C
75
°
C
V = 10 V
Pulse Test
V = 10 V
V = 4.5 V
Pulse Test
5, 10 A
5, 10 A
I = 20 A
D
I = 20 A
D
Drain Current I (A)
D
R
D
Pulse Test
(
)
Static Drain to Source on State Resistance
vs. Temperature
Forward Transfer Admittance vs.
Drain Current
S
(
)
R
D
|
F
V = 4.5 V
10 V
0.8
0.6
0.4
0.2
0
5
10
15
20
Drain to Source Saturation Voltage VS.
Gate to Source Voltage
1.0
I = 20 A
10 A
5 A
Pulse Test
Gate to Source Voltage V (V)
V
D
D
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| H7N1004M | Silicon N-Channel MOSFET High-Speed Power Switching |
| H7N1004LM | Silicon N-Channel MOSFET High-Speed Power Switching |
| H7N1004LS | Silicon N-Channel MOSFET High-Speed Power Switching |
| H8-300 | In-Circuit Emulator for Renesas H8/300 and H8/500 |
| H83069R-ZTAT | 16-BIT SINGLE-CHIP MICROCOMPUTER |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| H7N1004LM | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N-Channel MOSFET High-Speed Power Switching |
| H7N1004LS | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N-Channel MOSFET High-Speed Power Switching |
| H7N1004LS-E | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 100V 30A 3-Pin(2+Tab) LDPAK(S)-(1) Bulk |
| H7N1004M | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N-Channel MOSFET High-Speed Power Switching |
| H7N1005DS-E | 制造商:Renesas Electronics Corporation 功能描述: |
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