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參數(shù)資料
| 型號(hào)： | H7N0312AB |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | Silicon N Channel MOS FET High Speed Power Switching |
| 中文描述： | 硅?通道場(chǎng)效應(yīng)晶體管高速電源開(kāi)關(guān) |
| 文件頁(yè)數(shù)： | 7/11頁(yè) |
| 文件大?。?/td> | 117K |
| 代理商： | H7N0312AB |
H7N0312AB
Rev.2, Aug. 2002, page 5 of 5
Gate to Source Voltage V
GS
(V)
D
D
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Drain Current I
D
(A)
D
D
)
Static Drain to Source on State Resistance
vs. Drain Current
100
Pulse Test
Case Temperature Tc (
°
C)
S
D
)
Static Drain to Source on State Resistance
vs. Temperature
7
Pulse Test
F
Drain Current I
D
(A)
Forward Transfer Admittance vs.
Drain Current
500
400
300
200
100
0
4
8
12
16
20
3
1
0.1
30
10
3
30
300
6
5
4
3
2
1
-25
0
25
50
75
100 125
150
0
Pulse Test
I = 50 A
10 A
20 A
1
0.3
10
100
1000
V = 4.5 V
10 V
I = 50 A
10 A, 20 A
10 A, 20 A, 50 A
V = 4.5 V
10 V
3
30
1
0.3
0.1
10
100
10
100
300
1000
30
1
3
0.1
0.3
Tc = -25
°
C
V = 10 V
Pulse Test
75
°
C
25
°
C
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|---|---|
| H7N0312AB_05 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
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