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參數(shù)資料
| 型號： | H7N0203AB |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | Silicon N Channel MOS FET High Speed Power Switching |
| 中文描述： | 硅?通道場效應(yīng)晶體管高速電源開關(guān) |
| 文件頁數(shù)： | 5/12頁 |
| 文件大?。?/td> | 123K |
| 代理商： | H7N0203AB |
H7N0203AB
Rev.3, Aug. 2002, page 3 of 10
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V
(BR)DSS
Gate to source breakdown voltage V
(BR)GSS
Gate to source leak current
20
±
20
—
—
V
I
D
= 10 mA, V
GS
= 0
I
G
=
±
100
μ
A, V
DS
= 0
V
GS
=
±
16 V, V
DS
= 0
V
DS
= 20 V, V
GS
= 0
I
D
= 1 mA, V
DS
= 10 V*
I
D
= 45 A, V
GS
= 10 V*
I
D
= 45 A, V
GS
= 4.5 V*
I
D
= 45 A, V
DS
= 10 V*
V
DS
= 10 V
V
GS
= 0
f = 1 MHz
—
—
±
10
10
μ
A
μ
A
V
m
m
S
I
GSS
I
DSS
V
GS(off)
R
DS(on)
—
—
Zero gate voltage drain current
—
—
Gate to source cutoff voltage
1.0
—
2.5
1
Static drain to source on state
—
2.4
3.0
1
resistance
—
3.5
5.1
1
Forward transfer admittance
|y
fs
|
Ciss
80
140
—
1
Input capacitance
—
6800
—
pF
Output capacitance
Coss
—
1850
—
pF
Reverse transfer capacitance
Crss
—
750
—
pF
Total gate charge
Qg
—
110
—
nc
V
DD
= 10 V
V
GS
= 10 V
I
D
= 90 A
V
GS
= 10 V, I
D
= 45 A
R
L
=0.22
R
g
=4.7
Gate to source charge
Qgs
—
22
—
nc
Gate to drain charge
Qgd
—
20
—
nc
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
—
32
—
ns
Rise time
—
380
—
ns
Turn-off delay time
—
110
—
ns
Fall time
—
35
—
ns
Body
–
drain diode forward voltage
—
0.90
—
V
I
F
= 90 A, V
GS
= 0
I
= 90 A, V
= 0
diF/ dt =50 A/μs
Body
–
drain diode reverse recovery
time
—
60
—
ns
Note: 1. Pulse test
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| H7N0203AB_05 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| H7N0203AB-E | 制造商:Renesas Electronics Corporation 功能描述: |
| H7N0307AB | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| H7N0307AB_05 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| H7N0307AB-E | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 30V 60A 3-Pin(3+Tab) TO-220AB |
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