參數資料
型號: H5N5015P
文件頁數: 7/10頁
文件大小: 49K
代理商: H5N5015P
H5N5001FM
7
0
0.4
0.8
1.2
1.6
2.0
10
8
6
4
2
V = 0 V
5, 10 V
5
4
3
2
1
-50
0
Case Temperature Tc (°C)
50
100
150
200
0
I = 10mA
1mA
0.1mA
V = 10 V
Vin Monitor
D.U.T.
Vin
10 V
R
L
V
= 250 V
DD
tr
td(on)
Vin
90%
90%
10%
10%
Vout
td(off)
Vout
Monitor
10
90%
10%
t
f
Source to Drain Voltage V (V)
R
D
Reverse Drain Current vs.
Source to Drain Voltage
Pulse Test
G
G
Gate to Source Cutoff Voltage
vs. Case Temperature
Waveform
Switching Time Test Circuit
相關PDF資料
PDF描述
H5N6001P
H5P0301SM
H7N0203AB Silicon N Channel MOS FET High Speed Power Switching
H7N0307AB Silicon N Channel MOS FET High Speed Power Switching
H7N0308AB Datasheet|ADE-208-1569B|AUG.07.02|121K
相關代理商/技術參數
參數描述
H5N5015P-E 制造商:Renesas Electronics Corporation 功能描述:
H5N5016PL 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching
H5N5016PL(E) 制造商:Renesas Electronics Corporation 功能描述:
H5N6001P 制造商:未知廠家 制造商全稱:未知廠家 功能描述:
H5N6001P_05 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching