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參數(shù)資料
| 型號： | H5N2504DS |
| 英文描述： | Datasheet|ADE-208-1375A|JUN.11.02|102K |
| 中文描述： | 技術資料|腺- 208 - 1375A | JUN.11.02 | 102K的 |
| 文件頁數(shù)： | 3/10頁 |
| 文件大小： | 108K |
| 代理商： | H5N2504DS |
H5N2503P
Rev.1, Jun. 2002, page 3 of 10
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
250
—
—
V
I
D
= 10 mA, V
GS
= 0
Gate to source leak current
I
GSS
I
DSS
V
GS(off)
R
DS(on)
—
—
±0.1
μA
V
GS
= ±30 V, V
DS
= 0
V
DS
= 250 V, V
GS
= 0
V
DS
= 10 V, I
D
= 1 mA
I
D
= 25 A, V
GS
= 10 V
Zero gate voltage drain current
—
—
1
μA
Gate to source cutoff voltage
3.0
—
4.0
V
Static drain to source on state
resistance
—
0.040
0.055
Note4
Forward transfer admittance
|y
fs
|
Ciss
25
40
—
S
I
D
= 25 A, V
DS
= 10 V
V
DS
= 25 V
V
GS
= 0
f = 1 MHz
Note4
Input capacitance
—
5150
—
pF
Output capacitance
Coss
—
620
—
pF
Reverse transfer capacitance
Crss
—
105
—
pF
Turn-on delay time
td(on)
—
58
—
ns
I
D
= 25 A
V
GS
= 10 V
R
L
= 5
Rg = 10
V
DD
= 200 V
V
GS
= 10 V
I
D
= 50 A
I
F
= 50 A, V
GS
= 0
I
F
= 50 A, V
GS
= 0
Rise time
tr
—
210
—
ns
Turn-off delay time
td(off)
—
220
—
ns
Fall time
tf
—
190
—
ns
Total gate charge
Qg
—
140
—
nC
Gate to source charge
Qgs
—
25
—
nC
Gate to drain charge
Qgd
—
60
—
nC
Body-drain diode forward voltage
V
DF
trr
—
1.0
1.5
V
Bidy-drain diode reverse recovery
time
—
210
—
ns
Body-drain diode reverse recovery
charge
Qrr
—
1.8
—
μC
diF/dt = 100 A/μs
Notes: 4. Pulse test
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相關代理商/技術參數(shù) |
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|---|---|
| H5N2504DS-E | 制造商:Renesas Electronics Corporation 功能描述: 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 250V 7A 3-Pin(2+Tab) DPAK(S) Box |
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| H5N2505DL-E | 制造商:Renesas Electronics Corporation 功能描述: 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 250V 5A 3-Pin(3+Tab) DPAK(L)-(2) |
| H5N2505DS | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
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