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參數(shù)資料
| 型號： | H1N4148 |
| 英文描述： | Switching Diodes |
| 中文描述： | 開關(guān)二極管 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 35K |
| 代理商： | H1N4148 |
HI-SINCERITY
MICROELECTRONICS CORP.
H1N4148
HIGH-SPEED SWITCHING DIODES
Spec. No. : Preliminary Data
Issued Date : 1999.05.01
Revised Date : 1999.09.01
Page No. : 1/3
HSMC Product Specification
Description
The H1N4148 is designed for high-speed switching application in hybrid thick and thin-film
circuits. The device is manufactured by the sillcon epitaxial planar process and packed in plastic
surface mount package.
Features
Ultra-High Speed
Low Forard Voltage
Fast Reverse Recovery Time
Absolute Maximum Ratings
Characteristics
Symbol
VR
VRM
Value
75
100
Unit
V
V
Reverse Voltage
Peak Reverse Voltage
Rectified Current (Average)
Half Wave Rectification with Resist Load
at Tamb=25
°
C and f
≥
50Hz
Surge Forward Current at t<1s and Tj=25
°
C
Power Dissipation at Tamb=25
°
C
Junction Temperature
Storage Temperature Range
IO
150
mA
IFSM
Ptot
Tj
Ts
500
500
200
mA
mW
°
C
°
C
-65 to +200
Characteristics
(Tj=25
°
C)
Characteristics
Symbol
VF
IR
IR
IR
Min
-
-
-
-
Typ
-
-
-
-
Max
1
25
5
50
Unit
V
nA
uA
uA
Forward Voltage at IF=10mA
Leakage Current at VR=20V
at VR=75V
at VR=20V,Tj=150
°
C
Reverse Breakdown Voltage
tested with 100 us Pulses
Capacitance at VF=VR=0
Voltage Rise when Switching On
Tested with 50mA Forward Pulses
Tp=0.1us, Rise Time<30ns, fp=5~100kHz
Reverse Recovery Time From
IF=-IR=10mA to IRR=-1mA,VR=6V RL=100
Thermal Resistance Function to Ambient Air
Rectification Efficiency at f =100MHz,VRF=2V
V(BR)R
100
-
-
V
Ctot
-
-
4
pF
Vfr
-
-
2.5
V
trr
-
-
4
ns
RthA
η
v
-
-
-
0.35
-
K/mW
-
0.45
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