參數(shù)資料
型號(hào)： H11G3S
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 光電耦合器
英文描述： HIGH VOLTAGE PHOTODARLINGTON OPTOCOUPLERS
中文描述： 1 CHANNEL DARLINGTON OUTPUT OPTOCOUPLER
封裝： SURFACE MOUNT PACKAGE-6
文件頁(yè)數(shù)： 2/6頁(yè)
文件大小： 300K
代理商： H11G3S
2
Motorola Optoelectronics Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)(1)
Characteristic
Symbol
Min
Typ
(1)
Max
Unit
INPUT LED
Reverse Leakage Current (VR = 3 V)
Forward Voltage IF = 10 mA)
Capacitance (V = 0 V, f = 1 MHz)
IR
VF
CJ
—
0.05
10
μ
A
—
1.1
1.5
Volts
—
18
—
pF
DARLINGTON OUTPUT
(TA = 25
°
C and IF = 0 unless otherwise noted)
Collector–Emitter Breakdown Current
(IC = 1 mA, IF = 0)
H11G1
H11G2
H11G3
V(BR)CEO
100
80
55
—
—
—
—
—
—
Volts
Collector–Base Breakdown Voltage
(IC = 100
μ
A, IF = 0)
H11G1
H11G2
H11G3
V(BR)CBO
100
80
55
—
—
—
—
—
—
Volts
Emitter–Base Breakdown Voltage (IE = 100
μ
A, IF = 0)
Collector–Emitter Dark Current
(VCE = 80 V)
(VCE = 80 V, TA = 80
°
C)
(VCE = 60 V)
(VCE = 60 V, TA = 80
°
C)
(VCE = 30 V)
Capacitance (VCB = 10 V, f = 1 MHz)
COUPLED
(TA = 25
°
C unless otherwise noted)
Collector Output Current
(VCE = 1 V, IF = 10 mA)
(VCE = 5 V, IF = 1 mA)
(VCE = 5 V, IF = 1 mA)
Collector–Emitter Saturation Voltage
(IF = 1 mA, IC = 1 mA)
(IF = 16 mA, IC = 50 mA)
(IF = 20 mA, IC = 50 mA)
Isolation Surge Voltage(3,4) (60 Hz ac Peak, 1 Second)
Isolation Resistance(3) (V = 500 Vdc)
Isolation Capacitance(3) (V = 0 V, f = 1 MHz)
V(BR)EBO
ICEO
7
—
—
Volts
H11G1
H11G1
H11G2
H11G2
H11G3
—
—
—
—
—
—
—
—
—
—
100
100
100
100
100
nA
μ
A
nA
μ
A
nA
CCB
—
6
—
pF
H11G1, 2
H11G1, 2
H11G3
IC (CTR)(2)
100 (1000)
5 (500)
2 (200)
—
—
—
—
—
—
mA (%)
H11G1, 2
H11G1, 2
H11G3
VCE(sat)
—
—
—
0.75
0.85
0.85
1
1
1.2
Volts
VISO
7500
—
—
Vac(pk)
—
1011
—
Ohms
CIO
—
2
—
pF
SWITCHING
(TA = 25
°
C)
Turn–On Time
Pulse Width
300
μ
s, f = 30 Hz)
ton
toff
—
5
—
μ
s
Turn–Off Time
(IF = 10 mA, VCC = 5 V, RL = 100
,
—
100
—
1. Always design to the specified minimum/maximum electrical limits (where applicable).
2. Current Transfer Ratio (CTR) = IC/IF x 100%.
3. For this test, Pins 1 and 2 are common, and Photodarlington Pins 4 and 5 are common.
4. Isolation Surge Voltage, VISO, is an internal device dielectric breakdown rating.
相關(guān)PDF資料
PDF描述
H11G3SD HIGH VOLTAGE PHOTODARLINGTON OPTOCOUPLERS
H11G2 HIGH VOLTAGE PHOTODARLINGTON OPTOCOUPERS
H11L2 6-Pin DIP Optoisolators Logic Output
H11L2MS-M 6-PIN DIP OPTOISOLATORS LOGIC OUTPUT
H11L2MT-M 6-PIN DIP OPTOISOLATORS LOGIC OUTPUT
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
H11G3SD 功能描述:晶體管輸出光電耦合器 Hi Volt Optocoupler Photodarlington RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk
H11G3SM 制造商:Fairchild Semiconductor Corporation 功能描述:6-PIN DIP, HV DARL OUTPUT, SURFACE MOUNT - Bulk
H11G3SR2M 功能描述:晶體管輸出光電耦合器 Hi Volt Photodarling RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk
H11G3SR2VM 制造商:Fairchild Semiconductor Corporation 功能描述:6-PIN DIP, HV DARL OUTPUT, VDE, SURFACE MOUNT, T&R - Tape and Reel
H11G3SVM 制造商:Fairchild Semiconductor Corporation 功能描述:6-PIN DIP, HV DARL OUTPUT, VDE, SURFACE MOUNT - Bulk
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*