
2
Motorola Optoelectronics Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)(1)
Characteristic
Symbol
Min
Typ
(1)
Max
Unit
INPUT LED
Reverse Leakage Current (VR = 3 V)
Forward Voltage IF = 10 mA)
Capacitance (V = 0 V, f = 1 MHz)
IR
VF
CJ
—
0.05
10
μ
A
—
1.1
1.5
Volts
—
18
—
pF
DARLINGTON OUTPUT
(TA = 25
°
C and IF = 0 unless otherwise noted)
Collector–Emitter Breakdown Current
(IC = 1 mA, IF = 0)
H11G1
H11G2
H11G3
V(BR)CEO
100
80
55
—
—
—
—
—
—
Volts
Collector–Base Breakdown Voltage
(IC = 100
μ
A, IF = 0)
H11G1
H11G2
H11G3
V(BR)CBO
100
80
55
—
—
—
—
—
—
Volts
Emitter–Base Breakdown Voltage (IE = 100
μ
A, IF = 0)
Collector–Emitter Dark Current
(VCE = 80 V)
(VCE = 80 V, TA = 80
°
C)
(VCE = 60 V)
(VCE = 60 V, TA = 80
°
C)
(VCE = 30 V)
Capacitance (VCB = 10 V, f = 1 MHz)
COUPLED
(TA = 25
°
C unless otherwise noted)
Collector Output Current
(VCE = 1 V, IF = 10 mA)
(VCE = 5 V, IF = 1 mA)
(VCE = 5 V, IF = 1 mA)
Collector–Emitter Saturation Voltage
(IF = 1 mA, IC = 1 mA)
(IF = 16 mA, IC = 50 mA)
(IF = 20 mA, IC = 50 mA)
Isolation Surge Voltage(3,4) (60 Hz ac Peak, 1 Second)
Isolation Resistance(3) (V = 500 Vdc)
Isolation Capacitance(3) (V = 0 V, f = 1 MHz)
V(BR)EBO
ICEO
7
—
—
Volts
H11G1
H11G1
H11G2
H11G2
H11G3
—
—
—
—
—
—
—
—
—
—
100
100
100
100
100
nA
μ
A
nA
μ
A
nA
CCB
—
6
—
pF
H11G1, 2
H11G1, 2
H11G3
IC (CTR)(2)
100 (1000)
5 (500)
2 (200)
—
—
—
—
—
—
mA (%)
H11G1, 2
H11G1, 2
H11G3
VCE(sat)
—
—
—
0.75
0.85
0.85
1
1
1.2
Volts
VISO
7500
—
—
Vac(pk)
—
1011
—
Ohms
CIO
—
2
—
pF
SWITCHING
(TA = 25
°
C)
Turn–On Time
Pulse Width
300
μ
s, f = 30 Hz)
ton
toff
—
5
—
μ
s
Turn–Off Time
(IF = 10 mA, VCC = 5 V, RL = 100
,
—
100
—
1. Always design to the specified minimum/maximum electrical limits (where applicable).
2. Current Transfer Ratio (CTR) = IC/IF x 100%.
3. For this test, Pins 1 and 2 are common, and Photodarlington Pins 4 and 5 are common.
4. Isolation Surge Voltage, VISO, is an internal device dielectric breakdown rating.