www.vishay.com
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Document Number 83610
Rev. 1.6, 26-Oct-04
H11C4/ H11C5/ H11C6
Vishay Semiconductors
Output
Coupler
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Output
Parameter
Test condition
Symbol
V
RG
V
A
I
FRMS
I
AS
I
FM
I
GS
P
diss
Value
6.0
Unit
V
Reverse gate voltage
Anode voltage
DC or AC peak
400
V
RMS forward current
300
mA
Surge anode current
10 ms duration
100
μ
s, 1% Duty Cycle
5.0
A
Peak forward current
10
A
Surge gate current
5.0 ms duration
200
mA
Power dissipation
1000
mW
Derate linearly from 25°C
13.3
mW/°C
Parameter
Test condition
Symbol
V
ISO
Value
5300
Unit
V
RMS
Isolation test voltage (between
emitter and detector referred to
standard climate 23 °C/ 50 %
RH, DIN 50014)
Creepage
Clearance
Comparative tracking index per
DIN IEC 112/VDE 0303, part 1
Isolation resistance
≥
7.0
≥
7.0
175
mm
mm
V
IO
= 500 V, T
amb
= 25 °C
V
IO
= 500 V, T
amb
= 100 °C
R
IO
R
IO
P
tot
≥
10
12
≥
10
11
400
Total package dissipation
mW
Derate linearly from 25 °C
Operating temperature range
5.5
mW/°C
°C
T
amb
T
stg
- 55 to + 100
Storage temperature range
- 55 to + 150
°C
Lead soldering time at 260 °C
10
sec.
Parameter
Test condition
Symbol
V
F
I
R
C
O
Min
Typ.
1.2
Max
1.5
Unit
V
μ
A
Forward voltage
I
F
= 10 mA
V
R
= 3.0 V
V
R
= 0, f = 1.0 MHz
Reverse current
10
Capacitance
50
pF
Parameter
Test condition
Symbol
V
DM
Min
400
Typ.
Max
Unit
V
Forward blocking voltage
R
GK
= 10 K
, T
A
= 100 °C,
I
d
= 150
μ
A
R
GK
= 10 K
, T
A
= 100 °C,
I
d
= 150
μ
A
I
T
= 300 mA
R
GK
= 27 K
, V
FX
= 50 V
Reverse blocking voltage
V
DM
400
V
On-state voltage
V
t
I
H
1.1
1.3
V
μ
A
Holding current
500