參數(shù)資料
型號: H11A5SR2V
廠商: Fairchild Semiconductor Corporation
英文描述: GENERAL PURPOSE 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS
中文描述: 一般用途的6引腳光電晶體管光電耦合
文件頁數(shù): 3/6頁
文件大小: 408K
代理商: H11A5SR2V
www.in
fi
neon.com/opto
1-888-In
fi
neon (1-888-463-4636)
2001 In
fi
neon Technologies Corp.
Optoelectronics Division
San Jose, CA
Phototransistor, Industry Standard
2
55
March 27, 2000-00
4N35/36/37/38—Characteristics
Emitter
T
A
=25
°
C
* Indicates JEDEC registered value
H11A1 through H11A5—Characteristics
Emitter
T
A
=25
°
C
Symbol
Min.
Typ.
Max.
Unit
Condition
Forward Voltage*
V
F
0.9
1.3
1.5
1.7
V
I
I
F
F
=10 mA
=10 mA,
T
A
=
55
°
C
Reverse Current*
I
R
0.1
10
μ
A
pF
V
R
=6.0 V
V
R
=0, f=1.0 MHz
Capacitance
C
O
25
Detector
Breakdown Voltage, Collector-Emitter*
4N35/36/37
BV
CEO
30
V
I
C
=1.0 mA
4N38
80
Breakdown Voltage, Emitter-Collector*
BV
ECO
BV
CBO
7.0
V
I
E
=100
μ
A
I
C
=100
μ
A,
I
B
=1.0
μ
A
Breakdown Voltage, Collector-Base*
4N35/36/37
70
V
4N38
80
Leakage Current, Collector-Emitter*
4N35/36/37
I
CEO
5.0
50
nA
V
CE
=10 V,
I
F
=0
V
CE
=60 V,
I
F
=0
V
CE
=30 V,
I
F
=0,
T
A
=100
°
C
V
CE
=60 V,
I
F
=0,
T
A
=100
°
C
V
CE
=0
4N38
50
Leakage Current, Collector-Emitter*
4N35/36/37
I
CEO
500
μA
4N38
6.0
Capacitance, Collector-Emitter
C
CE
6.0
pF
Package
DC Current Transfer Ratio*
4N35/36/37
CTR
100
%
V
CE
=10 V,
I
F
=10 mA,
V
CE
=1.0 V,
I
F
=20 mA
V
CE
=10 V,
I
F
=10 mA,
T
A
=
55 to 100
°
C
4N38
20
DC Current Transfer Ratio*
4N35/36/37
CTR
40
50
%
4N38
10
11
30
pF
Resistance, Input to Output*
R
IO
V
IO
=500 V
f=1.0 MHz
Coupling Capacitance
C
IO
t
ON
,
t
OFF
0.5
Switching Time*
10
μs
I
C
=2.0 mA,
R
L
=100
,
V
CC
=10 V
Symbol
Min.
Typ.
Max.
Unit
Condition
Forward Voltage
H11A1
H11A4
V
F
1.1
1.5
V
I
F
=10 mA
H11A5
1.1
1.7
Reverse Current
I
R
C
0
10
μ
A
pF
V
R
=3.0 V
V
R
=0, f=1.0 MHz
Capacitance
50
Detector
Breakdown Voltage, Collector-Emitter
BV
CEO
BV
ECO
BV
CBO
I
CEO
C
CE
30
V
I
C
=1.0 mA,
I
F
=0 mA
I
E
=100
μ
A,
I
F
=0 mA
I
C
=10
μ
A,
I
F
=0 mA
V
CE
=10 V,
I
F
=0 mA
V
CE
=0
Breakdown Voltage, Emitter-Collector
7.0
V
Breakdown Voltage, Collector-Base
70
V
Leakage Current, Collector-Emitter
5.0
50
nA
Capacitance, Collector-Emitter
6.0
pF
Package
DC Current Transfer Ratio
H11A1
CTR
50
%
V
CE
=10 V,
I
F
=10 mA
H11A2/3
20
H11A4
10
H11A5
30
Saturation Voltage, Collector-Emitter
V
CE
sat
C
IO
t
ON
,
t
OFF
0.4
V
I
CE
=0.5 mA,
I
F
=10 mA
Capacitance, Input to Output
0.5
pF
Switching Time
3.0
μs
I
C
=2.0 mA,
R
L
=100
,
V
CE
=10 V
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