參數(shù)資料
型號(hào)： H11A5.3S
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 光電耦合器
英文描述： Tuner custom IC 32-TSSOP
中文描述： 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER
封裝： SURFACE MOUNT, DIP-6
文件頁(yè)數(shù)： 3/6頁(yè)
文件大小： 408K
代理商： H11A5.3S
www.in
fi
neon.com/opto
1-888-In
fi
neon (1-888-463-4636)
2001 In
fi
neon Technologies Corp.
Optoelectronics Division
San Jose, CA
Phototransistor, Industry Standard
2
–
55
March 27, 2000-00
4N35/36/37/38—Characteristics
Emitter
T
A
=25
°
C
* Indicates JEDEC registered value
H11A1 through H11A5—Characteristics
Emitter
T
A
=25
°
C
Symbol
Min.
Typ.
Max.
Unit
Condition
Forward Voltage*
V
F
0.9
1.3
1.5
1.7
V
I
I
F
F
=10 mA
=10 mA,
T
A
=
–
55
°
C
Reverse Current*
I
R
0.1
10
μ
A
pF
V
R
=6.0 V
V
R
=0, f=1.0 MHz
Capacitance
C
O
25
—
Detector
Breakdown Voltage, Collector-Emitter*
4N35/36/37
BV
CEO
30
—
—
V
I
C
=1.0 mA
4N38
80
—
—
Breakdown Voltage, Emitter-Collector*
BV
ECO
BV
CBO
7.0
—
—
V
I
E
=100
μ
A
I
C
=100
μ
A,
I
B
=1.0
μ
A
Breakdown Voltage, Collector-Base*
4N35/36/37
70
—
—
V
4N38
80
—
—
—
Leakage Current, Collector-Emitter*
4N35/36/37
I
CEO
—
5.0
50
nA
V
CE
=10 V,
I
F
=0
V
CE
=60 V,
I
F
=0
V
CE
=30 V,
I
F
=0,
T
A
=100
°
C
V
CE
=60 V,
I
F
=0,
T
A
=100
°
C
V
CE
=0
4N38
—
—
50
Leakage Current, Collector-Emitter*
4N35/36/37
I
CEO
—
—
500
μA
4N38
—
6.0
—
Capacitance, Collector-Emitter
C
CE
—
6.0
—
pF
Package
DC Current Transfer Ratio*
4N35/36/37
CTR
100
—
—
%
V
CE
=10 V,
I
F
=10 mA,
V
CE
=1.0 V,
I
F
=20 mA
V
CE
=10 V,
I
F
=10 mA,
T
A
=
–
55 to 100
°
C
4N38
20
—
—
DC Current Transfer Ratio*
4N35/36/37
CTR
40
50
—
%
4N38
—
—
10
11
30
—
—
pF
Resistance, Input to Output*
R
IO
—
—
V
IO
=500 V
f=1.0 MHz
Coupling Capacitance
C
IO
t
ON
,
t
OFF
—
0.5
—
Switching Time*
—
10
—
μs
I
C
=2.0 mA,
R
L
=100
,
V
CC
=10 V
Symbol
Min.
Typ.
Max.
Unit
Condition
Forward Voltage
H11A1
–
H11A4
V
F
—
1.1
1.5
V
I
F
=10 mA
H11A5
—
1.1
1.7
Reverse Current
I
R
C
0
—
—
10
μ
A
pF
V
R
=3.0 V
V
R
=0, f=1.0 MHz
Capacitance
—
50
—
Detector
Breakdown Voltage, Collector-Emitter
BV
CEO
BV
ECO
BV
CBO
I
CEO
C
CE
30
—
—
V
I
C
=1.0 mA,
I
F
=0 mA
I
E
=100
μ
A,
I
F
=0 mA
I
C
=10
μ
A,
I
F
=0 mA
V
CE
=10 V,
I
F
=0 mA
V
CE
=0
Breakdown Voltage, Emitter-Collector
7.0
—
—
V
Breakdown Voltage, Collector-Base
70
—
—
V
Leakage Current, Collector-Emitter
—
5.0
50
nA
Capacitance, Collector-Emitter
—
6.0
—
pF
Package
DC Current Transfer Ratio
H11A1
CTR
50
—
—
%
V
CE
=10 V,
I
F
=10 mA
H11A2/3
20
—
—
H11A4
10
—
—
H11A5
30
—
—
Saturation Voltage, Collector-Emitter
V
CE
sat
C
IO
t
ON
,
t
OFF
—
—
0.4
V
I
CE
=0.5 mA,
I
F
=10 mA
—
Capacitance, Input to Output
—
0.5
—
pF
Switching Time
—
3.0
—
μs
I
C
=2.0 mA,
R
L
=100
,
V
CE
=10 V
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