參數(shù)資料
型號(hào)： H11A5.300W
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 光電耦合器
英文描述： GENERAL PURPOSE 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS
中文描述： 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER
封裝： DIP-6
文件頁(yè)數(shù)： 2/6頁(yè)
文件大?。?/td> 408K
代理商： H11A5.300W
www.in
fi
neon.com/opto
1-888-In
fi
neon (1-888-463-4636)
2001 In
fi
neon Technologies Corp.
Optoelectronics Division
San Jose, CA
Phototransistor, Industry Standard
2
–
54
March 27, 2000-00
Maximum Ratings
Emitter
Reverse Voltage .......................................................................................... 6.0 V
Forward Current ........................................................................................60 mA
Surge Current (t
≤
10
μ
s)...............................................................................2.5 A
Power Dissipation................................................................................... 100 mW
Detector
Collector-Emitter Breakdown Voltage........................................................... 70 V
Emitter-Base Breakdown Voltage................................................................ 7.0 V
Collector Current.......................................................................................50 mA
Collector Current(t <1.0 ms)....................................................................100 mA
Power Dissipation................................................................................... 150 mW
Package
Isolation Test Voltage..........................................................................5300 V
Creepage ..............................................................................................
Clearance .............................................................................................
Isolation Thickness between Emitter and Detector...............................
Comparative Tracking Index per DIN IEC 112/VDE0303, part 1 .................. 175
Isolation Resistance
V
IO
=500 V,
T
A
=25
°
C...............................................................................10
V
IO
=500 V,
T
A
=100
°
C............................................................................ 10
Storage Temperature................................................................
–
55
Operating Temperature............................................................
–
55
Junction Temperature................................................................................ 100
Soldering Temperature (max. 10 s, dip soldering:
distance to seating plane
≥
1.5 mm)...................................................... 260
T
A
=25
°
C
RMS
≥
≥
≥
7.0 mm
7.0 mm
0.4 mm
12
11
°
C
°
C
°
C
°
°
C to +150
C to +100
°
C
4N25/26/27/28—Characteristics
Emitter
T
A
=25
°
C
* Indicates JEDEC registered values
Symbol
Min.
Typ.
Max.
Unit
Condition
Forward Voltage*
V
F
—
1.3
1.5
V
I
F
=50 mA
Reverse Current*
I
R
—
0.1
100
μ
A
V
R
=3.0 V
Capacitance
C
O
—
25
—
pF
V
R
=0
Detector
Breakdown Voltage*
Collector-Emitter
BV
CEO
30
—
—
V
I
C
=1.0 mA
Emitter-Collector
BV
ECO
7.0
—
—
I
E
=100
μ
A
Collector-Base
BV
CBO
70
—
—
I
C
=100
μ
A
I
CEO
(dark)*
4N25/26/27
4N28
—
—
5.0
10
50
100
nA
V
CE
=10 V, (base open)
I
CBO
(dark)*
—
—
2.0
20
nA
V
CB
=10 V, (emitter open)
Capacitance, Collector-Emitter
C
CE
—
6.0
—
pF
V
CE
=0
Package
DC Current Transfer Ratio*
4N25/26
CTR
20
50
—
%
V
CE
=10 V,
I
F
=10 mA
4N27/28
10
30
—
Isolation Voltage*
4N25
V
IO
2500
—
—
V
Peak, 60 Hz
4N26/27
1500
—
—
4N28
500
—
—
Saturation Voltage, Collector-Emitter
V
CE(sat)
—
—
0.5
V
I
CE
=2.0 mA,
I
F
=50 mA
Resistance, Input to Output*
R
IO
100
—
—
G
V
IO
=500 V
Coupling Capacitance
C
IO
—
0.5
—
pF
f=1.0 MHz
Rise and Fall Times
t
r
,
t
f
—
2.0
—
μ
s
I
V
F
=10 mA
CE
=10 V,
R
L
=100
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