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| 型號： | H1- |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | NPN/NPN resistor-equipped transistors R1 = 47 kohm, R2 = open |
| 中文描述： | NPN/NPN配電阻型晶體管；R1=47千歐姆，R2=開路 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 47K |
| 代理商： | H1- |
9397 750 14463
Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 02 — 29 April 2005
3 of 8
Philips Semiconductors
PEMH14; PUMH14
NPN/NPN resistor-equipped transistors; R1 = 47 k
, R2 = open
5.
Limiting values
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2]
Reflow soldering is the only recommended soldering method.
6.
Thermal characteristics
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Reflow soldering is the only recommended soldering method.
Table 6:
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Per transistor
V
CBO
collector-base voltage
V
CEO
collector-emitter voltage
V
EBO
emitter-base voltage
I
O
output current (DC)
I
CM
peak collector current
P
tot
total power dissipation
SOT363
SOT666
T
stg
storage temperature
T
j
junction temperature
T
amb
ambient temperature
Per device
P
tot
total power dissipation
SOT363
SOT666
Limiting values
Conditions
Min
Max
Unit
open emitter
open base
open collector
-
-
-
-
-
50
50
5
100
100
V
V
V
mA
mA
T
amb
≤
25
°
C
[1]
-
200
200
+150
150
+150
mW
mW
°
C
°
C
°
C
[1] [2]
-
65
-
65
T
amb
≤
25
°
C
[1]
-
300
300
mW
mW
[1] [2]
-
Table 7:
Symbol
Per transistor
R
th(j-a)
Thermal characteristics
Parameter
Conditions
Min
Typ
Max
Unit
thermal resistance from
junction to ambient
SOT363
SOT666
in free air
[1]
-
-
-
625
625
K/W
K/W
[1] [2]
-
Per device
R
th(j-a)
thermal resistance from
junction to ambient
SOT363
SOT666
in free air
[1]
-
-
-
416
416
K/W
K/W
[1] [2]
-
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