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參數(shù)資料
| 型號： | GW40NC60V |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-CHANNEL 50A - 600V - TO-247 Very Fast PowerMESH IGBT |
| 中文描述： | N溝道50A條- 600V的-到247 IGBT的非常快PowerMESH |
| 文件頁數(shù)： | 2/10頁 |
| 文件大小： | 230K |
| 代理商： | GW40NC60V |
STGW40NC60V
2/10
Table 3: Absolute Maximum ratings
Symbol
V
CES
Collector-Emitter Voltage (V
GS
= 0)
V
ECR
Reverse Battery Protection
V
GE
Gate-Emitter Voltage
I
C
Collector Current (continuous) at 25
°
C (#)
I
C
Collector Current (continuous) at 100
°
C (#)
I
CM
(1)
Collector Current (pulsed)
P
TOT
Total Dissipation at T
C
= 25
°
C
Derating Factor
T
stg
Storage Temperature
T
j
Operating Junction Temperature
(1)Pulse width limited by max. junction temperature.
Table 4: Thermal Data
ELECTRICAL CHARACTERISTICS
(T
CASE
=25
°
C UNLESS OTHERWISE SPECIFIED)
Table 5: Off
Symbol
Parameter
V
BR(CES)
Collectro-Emitter Breakdown
Voltage
I
CES
Collector-Emitter Leakage
Current (V
CE
= 0)
Tc=25
°
C
Tc=125
°
C
I
GES
Gate-Emitter Leakage
Current (V
CE
= 0)
Table 6: On
Symbol
V
GE(th)
V
CE(SAT)
(#) Calculated according to the iterative formula:
Parameter
Value
Symbol
V
600
20
V
± 20
V
80
A
50
A
200
A
260
W
2.08
W/
°
C
–
55 to 150
°
C
Min.
Typ.
Max.
0.48
50
Unit
°
C/W
°
C/W
°
C
Rthj-case
Rthj-amb
T
L
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Maximum Lead Temperature for Soldering Purpose
(1.6 mm from case, for 10 sec.)
300
Test Conditions
I
C
= 1 mA, V
GE
= 0
Min.
600
Typ.
Max.
Unit
V
V
GE
= Max Rating
10
1
μA
mA
V
GE
= ± 20 V , V
CE
= 0
± 100
nA
Parameter
Test Conditions
V
CE
= V
GE
, I
C
= 250 μA
V
GE
= 15 V, I
C
= 40A, Tj= 25
°
C
V
GE
= 15 V, I
C
= 40A,
Tj= 125
°
C
Min.
3.75
Typ.
Max.
5.75
Unit
V
Gate Threshold Voltage
Collector-Emitter Saturation
Voltage
1.9
1.7
2.5
V
V
ICTC
)
–
C
–
)
TCIC
(
)
×
RTHJ
=
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