參數(shù)資料
型號(hào)： GVT71128E36B-9
英文描述： x36 Fast Synchronous SRAM
中文描述： x36快速同步SRAM
文件頁(yè)數(shù)： 18/24頁(yè)
文件大小： 293K
代理商： GVT71128E36B-9
CY7C1347C/GVT71128DA36
CY7C1327C/GVT71256DA18
18
AC Test Loads and Waveforms
DQ
317
351
5 pF
(a)
(b)
DQ
50
Z
0
=50
V
t
= 1.5V
3.3V
ALL INPUT PULSES
3.0V
0V
90%
10%
90%
10%
≤
1.5 ns
≤
1.5 ns
(c)
Switching Characteristics
Over the Operating Range
[23]
-4
250 MHz
Min.
-4.4
225 MHz
Min.
-5
200 MHz
Min.
-6
166 MHz
Min.
Parameter
Description
Max.
Max.
Max.
Max.
Unit
Clock
t
KC
t
KH
t
KL
Output Times
t
KQ
t
KQX
t
KQLZ
t
KQHZ
t
OEQ
t
OELZ
t
OEHZ
Set-up Times
t
S
Hold Times
t
H
Clock Cycle Time
4.0
4.4
5.0
6.0
ns
Clock HIGH Time
1.6
1.7
2.0
2.4
ns
Clock LOW Time
1.6
1.7
2.0
2.4
ns
Clock to Output Valid
2.5
2.5
2.5
3.5
ns
Clock to Output Invalid
Clock to Output in Low-Z
[14, 19, 24]
Clock to Output in High-Z
[14, 19, 24]
OE to Output Valid
[25]
OE to Output in Low-Z
[14, 19, 24]
OE to Output in High-Z
[14, 19, 24]
1.25
1.25
1.25
1.25
ns
0
0
0
0
ns
1.25
3.0
1.25
3.0
1.25
3.0
1.25
4.0
ns
2.5
2.5
2.5
3.5
ns
0
0
0
0
ns
2.5
2.5
2.5
3.5
ns
Address, Controls, and Data In
[26]
1.0
1.0
1.0
1.0
ns
Address, Controls, and Data In
[26]
1.0
1.0
1.0
1.0
ns
Typical Output Buffer Characteristics
Output High Voltage
V
OH
(V)
–
0.5
Pull-Up Current
I
OH
(mA) Min.
–
38
Output Low Voltage
V
OL
(V)
–
0.5
Pull-Down Current
I
OL
(mA) Min.
0
I
OH
(mA) Max.
–
105
I
OL
(mA) Max.
0
0
–
38
–
105
0
0
0
0.8
–
38
–
105
0.4
10
20
1.25
–
26
–
83
0.8
20
40
1.5
–
20
–
70
1.25
31
63
2.3
0
–
30
1.6
40
80
2.7
0
–
10
2.8
40
80
2.9
0
0
3.2
40
80
3.4
0
0
3.4
40
80
Notes:
23. Test conditions as specified with the output loading as shown in part (a) of AC Test Loads unless otherwise noted.
24. At any given temperature and voltage condition, t
is less than t
KQLZ
and t
OEHZ
is less than t
OELZ
.
25. OE is a
“
don
’
t care
”
when a byte write enable is sampled LOW.
26. This is a synchronous device. All synchronous inputs must meet specified set-up and hold time, except for
“
don
’
t care
”
as defined in the truth table.
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