參數(shù)資料
型號： GVT71128DA36T-6
英文描述： x36 Fast Synchronous SRAM
中文描述： x36快速同步SRAM
文件頁數(shù)： 17/24頁
文件大?。?/td> 293K
代理商： GVT71128DA36T-6
CY7C1347C/GVT71128DA36
CY7C1327C/GVT71256DA18
17
Electrical Characteristics
Over the Operating Range
Parameter
Description
Test Conditions
Min.
Max.
Unit
V
IHD
V
IH
V
Il
IL
I
IL
I
Input High (Logic 1) Voltage
[12, 18]
Data Inputs (DQx)
2.0
V
CC
+0.3
4.6
V
All Other Inputs
2.0
V
Input Low (Logic 0) Voltage
[12, 18]
–
0.5
0.8
V
μ
A
μ
A
Input Leakage Current
0V <
V
IN
< V
CC
0V <
V
IN
< V
CC
–
5
5
MODE and ZZ Input Leakage
Current
[19]
–
30
30
IL
O
V
OH
V
OL
VCC
Output Leakage Current
Output High Voltage
[12]
Output Low Voltage
[12]
Supply Voltage
[12]
I/O Supply Voltage
[12]
Output(s) disabled, 0V < V
OUT
< V
CC
I
OH
=
–
5.0 mA
I
OL
= 8.0 mA
–
5
5
μ
A
V
2.4
0.4
V
3.135
3.6
V
VCCQ
3.135
V
CC
V
Parameter
Description
Conditions
Typ.
-4
-4.4
-5
-6
Unit
I
CC
Power Supply
Current:
Operating
[20, 21, 22]
CMOS Standby
[21, 22]
Device selected; all inputs < V
IL
or > V
IH
;
cycle time > t
KC
min.; V
CC
= Max.;
outputs open
150
450
400
360
300
mA
I
SB2
Device deselected; V
CC
= Max.;
all inputs < V
SS
+ 0.2 or >V
CC
–
0.2;
all inputs static; CLK frequency = 0
5
10
10
10
10
mA
I
SB3
TTL Standby
[21, 22]
Device deselected; all inputs < V
IL
or > V
IH
; all inputs static;
V
CC
= Max.; CLK frequency = 0
Device deselected;
all inputs < V
IL
or > V
IH
; V
CC
= Max.;
CLK cycle time > t
KC
min.
10
20
20
20
20
mA
I
SB4
Clock Running
[21, 22]
40
140
125
110
90
mA
Capacitance
[14]
Parameter
Description
Test Conditions
T
A
= 25
°
C, f = 1 MHz,
V
CC
= 3.3V
Typ.
5
Max.
7
Unit
pF
C
I
C
O
Input Capacitance
Input/Output Capacitance (DQ)
7
8
pF
Thermal Resistance
Description
Test Conditions
Symbol
TQFP Typ.
Unit
Thermal Resistance (Junction to Ambient) Still Air, soldered on a 4.25 x 1.125 inch,
4-layer PCB
Θ
JA
Θ
JC
25
°
C/W
Thermal Resistance (Junction to Case)
9
°
C/W
Notes:
18. Overshoot: V
IH
≤
+6.0V for t
≤
t
KC
/2.
Undershoot:V
≤
–
2.0V for t
≤
t
KC
/2.
19. Output loading is specified with C
L
= 5 pF as in AC Test Loads.
20. I
CC
is given with no output current. I
increases with greater output loading and faster cycle times.
21.
“
”
means the device is in Power-Down mode as defined in the truth table.
“
Device Selected
”
means the device is active.
22. Typical values are measured at 3.3V, 25
°
C, and 20-ns cycle time.
相關(guān)PDF資料
PDF描述
GVT71128E36B-10 x36 Fast Synchronous SRAM
GVT71128E36B-7 x36 Fast Synchronous SRAM
GVT71128E36B-8 x36 Fast Synchronous SRAM
GVT71128E36B-9 x36 Fast Synchronous SRAM
GVT71128E36T-10 x36 Fast Synchronous SRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GVT71128E36B-10 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x36 Fast Synchronous SRAM
GVT71128E36B-7 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x36 Fast Synchronous SRAM
GVT71128E36B-8 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x36 Fast Synchronous SRAM
GVT71128E36B-9 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x36 Fast Synchronous SRAM
GVT71128E36T-10 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x36 Fast Synchronous SRAM
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*