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參數(shù)資料
| 型號(hào)： | GU88LS02 |
| 廠商： | GTM CORPORATION |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 中文描述： | N溝道增強(qiáng)型功率MOSFET |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 285K |
| 代理商： | GU88LS02 |
GU88LS02
Page: 1/4
ISSUED DATE :2006/01/05
REVISED DATE :
G
G U
U 8888L
L S
S 0022
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Description
The GU88LS02 used advanced design and process to achieve low gate charge, low on-resistance and fast
switching performance.
The TO-263 package is universally preferred for all commercial-industrial surface mount applications and
suited for low voltage applications such as DC/DC converters.
Features
*Low Gate Charge
*Simple Drive Requirement
*Fast Switching
Package Dimensions
Millimeter
REF.
Min.
Max.
REF.
Min.
Max.
A
4.40
4.80
c2
1.25
1.45
b
0.76
1.00
b2
1.17
1.47
L4
0.00
0.30 B D
8.6
9.0
c
0.36
0.5
e
2.54 REF.
L3
1.50 REF.
L
14.6
15.8
L1
2.29
2.79
0
8
E
9.80
10.4
L2
1.27 REF.
Absolute Maximum Ratings
Parameter
Symbol
Ratings
Unit
Drain-Source Voltage
VDS
25
V
Gate-Source Voltage
VGS
±20
V
Continuous Drain Current, VGS@4.5V
ID @TC=25 :
75
A
Continuous Drain Current, VGS@4.5V
ID @TC=100 :
62.5
A
Pulsed Drain Current1
IDM
350
A
Total Power Dissipation
PD @TC=25 :
96
W
Linear Derating Factor
0.75
W/ :
Operating Junction and Storage Temperature Range
Tj, Tstg
-55 ~ +150
:
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance Junction-case
Max.
Rthj-case
1.3
: /W
Thermal Resistance Junction-ambient
Max.
Rthj-amb
62
/
: W
BVDSS
25V
RDS(ON)
5m
ID
75A
Pb Free Plating Product
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