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參數(shù)資料
| 型號(hào)： | GU20N03 |
| 廠商： | GTM CORPORATION |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 中文描述： | N溝道增強(qiáng)型功率MOSFET |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 339K |
| 代理商： | GU20N03 |
GU20N03
Page: 1/5
ISSUED DATE :2005/06/28
REVISED DATE :
G
G U
U 2200N
N 0033
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Description
The GU20N03 provide the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-263 package is universally preferred for all commercial-industrial surface mount applications and
suited for low voltage applications such as DC/DC converters.
Features
*Dynamic dv/dt Rating
*Repetitive Avalanche Rated
*Simple Drive Requirement
*Fast Switching
Package Dimensions
Millimeter
REF.
Min.
Max.
REF.
Min.
Max.
A
4.40
4.80
c2
1.25
1.45
b
0.76
1.00
b2
1.17
1.47
L4
0.00
0.30 B D
8.6
9.0
c
0.36
0.5
e
2.54 REF.
L3
1.50 REF.
L
14.6
15.8
L1
2.29
2.79
0
8
E
9.80
10.4
L2
1.27 REF.
Absolute Maximum Ratings
Parameter
Symbol
Ratings
Unit
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
f 20
V
Continuous Drain Current, VGS@10V
ID @TC=25 :
20
A
Continuous Drain Current, VGS@10V
ID @TC=100 :
13
A
Pulsed Drain Current1
IDM
58
A
Total Power Dissipation
PD @TC=25 :
31
W
Linear Derating Factor
0.25
W/
Operating Junction and Storage Temperature Range
Tj, Tstg
-55 ~ +150
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance Junction-case
Max.
Rthj-c
4.0
/W
Thermal Resistance Junction-ambient
Max.
Rthj-a
62
/W
BVDSS
30V
RDS(ON)
52m
ID
20A
Pb Free Plating Product
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|---|---|
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| GU2531S26 | 功能描述:POT 2W TEN TURN WW 25K OHM RoHS:是 類別:電位計(jì)，可變電阻器 >> 旋轉(zhuǎn) - 線性 系列:GU 標(biāo)準(zhǔn)包裝:5 系列:6637 電阻（歐姆）:1k 功率（瓦特）:1W 容差:±10% 溫度系數(shù):±500ppm/°C 匝數(shù):單路 旋轉(zhuǎn):連續(xù) 調(diào)節(jié)型:頂部調(diào)節(jié) 電阻材料:導(dǎo)電塑料 端接類型:* 觸動(dòng)器長(zhǎng)度:* 觸動(dòng)器類型:* 觸動(dòng)器直徑:* 尺寸 - 主體:* 安裝類型:* 包裝:* 其它名稱:Q4208629 |
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