參數(shù)資料
型號(hào)： GU08P20
廠商： GTM CORPORATION
英文描述： P-CHANNEL ENHANCEMENT MODE POWER MOSFET
中文描述： P溝道增強(qiáng)型功率MOSFET
文件頁(yè)數(shù)： 1/4頁(yè)
文件大?。?/td> 285K
代理商： GU08P20
GU08P20
Page: 1/4
ISSUED DATE :2006/01/19
REVISED DATE :
G
G U
U 0088P
P 2200
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Description
The GU08P20 (TO-263 package) is universally preferred for all commercial-industrial surface mount applications
and suited for low voltage applications such as DC/DC converters.
Features
*Simple Drive Requirement
*Lower On-resistance
*Fast Switching Characteristic
*RoHS Compliant
Package Dimensions
Millimeter
REF.
Min.
Max.
REF.
Min.
Max.
A
4.40
4.80
c2
1.25
1.45
b
0.76
1.00
b2
1.17
1.47
L4
0.00
0.30 B D
8.6
9.0
c
0.36
0.5
e
2.54 REF.
L3
1.50 REF.
L
14.6
15.8
L1
2.29
2.79
0
8
E
9.80
10.4
L2
1.27 REF.
Absolute Maximum Ratings
Parameter
Symbol
Ratings
Unit
Drain-Source Voltage
VDS
-200
V
Gate-Source Voltage
VGS
±20
V
Continuous Drain Current, VGS@10V
ID @TC=25 :
-8
A
Continuous Drain Current, VGS@10V
ID @TC=100 :
-5
A
Pulsed Drain Current1
IDM
-30
A
Total Power Dissipation
PD @TC=25 :
96
W
Linear Derating Factor
0.77
W/ :
Operating Junction and Storage Temperature Range
Tj, Tstg
-55 ~ +150
:
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance Junction-case
Max.
Rthj-c
1.3
: /W
Thermal Resistance Junction-ambient
Max.
Rthj-a
62
: /W
BVDSS
-200V
RDS(ON)
680m
ID
-8A
Pb Free Plating Product
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