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參數(shù)資料
| 型號(hào)： | GTT2610 |
| 廠商： | GTM CORPORATION |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 中文描述： | N溝道增強(qiáng)型功率MOSFET |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 281K |
| 代理商： | GTT2610 |
GTT2610
Page: 2/4
ISSUED DATE :2006/06/13
REVISED DATE :
Electrical Characteristics (Tj = 25 :::: unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS
60
-
V
VGS=0, ID=250uA
Breakdown Voltage Temperature Coefficient
BVDSS /
Tj
-
0.05
-
V/ :
Reference to 25 , I
:
D=1mA
Gate Threshold Voltage
VGS(th)
1.0
-
3.0
V
VDS=VGS, ID=250uA
Forward Transconductance
gfs
-
5.0
-
S
VDS=5V, ID=3A
Gate-Source Leakage Current
IGSS
-
±100
nA
VGS= ±20V
Drain-Source Leakage Current(Tj=25 )
:
-
10
uA
VDS=60V, VGS=0
Drain-Source Leakage Current(Tj=70 )
:
IDSS
-
25
uA
VDS=48V, VGS=0
-
90
VGS=10V, ID=3A
Static Drain-Source On-Resistance
RDS(ON)
-
120
m
VGS=4.5V, ID=2A
Total Gate Charge2
Qg
-
6
10
Gate-Source Charge
Qgs
-
1.6
-
Gate-Drain (“Miller”) Change
Qgd
-
3
-
nC
ID=3A
VDS=48V
VGS=4.5V
Turn-on Delay Time2
Td(on)
-
6
-
Rise Time
Tr
-
5
-
Turn-off Delay Time
Td(off)
-
16
-
Fall Time
Tf
-
3
-
ns
VDS=30V
ID=1A
VGS=10V
RG=3.3
RD=30
Input Capacitance
Ciss
-
490
780
Output Capacitance
Coss
-
55
-
Reverse Transfer Capacitance
Crss
-
40
-
pF
VGS=0V
VDS=25V
f=1.0MHz
Source-Drain Diode
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Forward On Voltage2
VSD
-
1.2
V
IS=1.2A, VGS=0V
Reverse Recovery Time
Trr
-
25
-
ns
Reverse Recovery Charge
Qrr
-
26
-
nC
IS=3A, VGS=0V
dI/dt=100A/ s
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Surface mounted on 1 in2 copper pad of FR4 board;156 : /W when mounted on min. copper pad.
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