- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄65338 > GTT2605 (GTM CORPORATION) P-CHANNEL ENHANCEMENT MODE POWER MOSFET PDF資料下載
參數(shù)資料
| 型號： | GTT2605 |
| 廠商： | GTM CORPORATION |
| 英文描述： | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 中文描述： | P溝道增強(qiáng)型功率MOSFET |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 300K |
| 代理商： | GTT2605 |
2/4
ISSUED DATE :2006/03/28
REVISED DATE :
Electrical Characteristics (Tj = 25 :::: unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS
-30
-
V
VGS=0, ID=-250uA
Breakdown Voltage Temperature Coefficient
BVDSS /
Tj
-
-0.02
-
V/ :
Reference to 25 : , ID=-1mA
Gate Threshold Voltage
VGS(th)
-1.0
-
-3.0
V
VDS=VGS, ID=-250uA
Forward Transconductance
gfs
-
6
-
S
VDS=-5V, ID=-4.0A
Gate-Source Leakage Current
IGSS
-
±100
nA
VGS= ±20V
Drain-Source Leakage Current(Tj=25 : )
-
-1
uA
VDS=-30V, VGS=0
Drain-Source Leakage Current(Tj=55 : )
IDSS
-
-25
uA
VDS=-24V, VGS=0
-
80
VGS=-10V, ID=-4.0A
Static Drain-Source On-Resistance2
RDS(ON)
-
120
m
VGS=-4.5V, ID=-3.0A
Total Gate Charge2
Qg
-
5.5
8.8
Gate-Source Charge
Qgs
-
1
-
Gate-Drain (“Miller”) Change
Qgd
-
2.6
-
nC
ID=-4.0A
VDS=-24V
VGS=-4.5V
Turn-on Delay Time2
Td(on)
-
7
-
Rise Time
Tr
-
6
-
Turn-off Delay Time
Td(off)
-
18
-
Fall Time
Tf
-
4
-
ns
VDS=-15V
ID=-1A
VGS=-10V
RG=3.3
RD=15
Input Capacitance
Ciss
-
400
640
Output Capacitance
Coss
-
90
-
Reverse Transfer Capacitance
Crss
-
30
-
pF
VGS=0V
VDS=-25V
f=1.0MHz
Source-Drain Diode
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Forward On Voltage2
VSD
-
-1.2
V
IS=-1.6A, VGS=0V
Reverse Recovery Time2
Trr
-
21
-
ns
Reverse Recovery Charge
Qrr
-
14
-
nC
IS=-4.0A, VGS=0V
dI/dt=100A/ s
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Surface mounted on 1 in2 copper pad of FR4 board; 156 : /W when mounted on Min. copper pad.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| GTT2610 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| GTT2623 | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| GTT2625 | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| GTT3434 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| GTT3455 | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GTT2610 | 制造商:GTM 制造商全稱:GTM 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| GTT2623 | 制造商:GTM 制造商全稱:GTM 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| GTT2625 | 制造商:GTM 制造商全稱:GTM 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| GTT-275A | 制造商:Duratool 功能描述:4.8V Pivoting Cordless Screwdriver Kit |
| GTT-281A | 制造商:Distributed By MCM 功能描述:F and BNC Connector Wrench |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。