參數(shù)資料
型號: GT80J101A
英文描述: TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 80A I(C) | TO-247VAR
中文描述: 晶體管| IGBT的|正陳| 600V的五(巴西)國際消費電子展| 80A條一(c)|至247VAR
文件頁數(shù): 2/4頁
文件大?。?/td> 216K
代理商: GT80J101A
GT80J101A
2000-06-28 2/4
C
C
C
C
Collector-emitter voltage V
CE
(V)
I
C
V
CE
C
C
Gate-emitter voltage V
GE
(V)
V
CE
V
GE
C
C
Gate-emitter voltage V
GE
(V)
V
CE
V
GE
C
C
Gate-emitter voltage V
GE
(V)
V
CE
V
GE
Gate-emitter voltage V
GE
(V)
I
C
V
GE
Case temperature Tc (°C)
V
CE (sat)
Tc
C
V
C
0
0
2
4
6
8
10
20
40
60
80
100
15
20
10
8
6
5
Common emitter
Tc
=
25 °C
VGE
=
4 V
0
0
2
4
6
8
10
4
8
12
16
20
24
10
20
40
60
IC
=
80 A
Common emitter
Tc
=
40°C
0
0
20
40
60
80
100
2
4
6
8
10
12
Common emitter
VCE
=
5
V
40
25
Tc
=
125°C
Common emitter
VGE
=
15
V
0
40
1
2
3
4
0
40
80
120
160
IC
=
10 A
30
50
80
0
0
2
4
6
8
10
4
8
12
16
20
24
10
20
40
60
IC
=
80 A
Common emitter
Tc
=
25°C
0
0
2
4
6
8
10
4
8
12
16
20
24
10
20
40
60
IC
=
80 A
Common emitter
Tc
=
125°C
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