型號: | GT50J325 |
元件分類: | 開關 |
英文描述: | TOGGLE SWITCH, DP3T, MOMENTARY, 4A, 28VDC, PANEL MOUNT-THREADED |
文件頁數: | 3/7頁 |
文件大?。?/td> | 525K |
代理商: | GT50J325 |
相關PDF資料 |
PDF描述 |
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GT5J311(SM) | TOGGLE SWITCH, DP3T, MOMENTARY, 4A, 28VDC, PANEL MOUNT-THREADED |
GT5J311 | TOGGLE SWITCH, DP3T, MOMENTARY, 4A, 28VDC, PANEL MOUNT-THREADED |
GT60J323 | TOGGLE SWITCH, DP3T, MOMENTARY, 4A, 28VDC, PANEL MOUNT-THREADED |
GT8G103(2-7B6C) | TOGGLE SWITCH, DP3T, MOMENTARY, 4A, 28VDC, PANEL MOUNT-THREADED |
GT8G103(2-7B5C) | TOGGLE SWITCH, DP3T, MOMENTARY, 4A, 28VDC, PANEL MOUNT-THREADED |
相關代理商/技術參數 |
參數描述 |
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GT50J325(Q) | 功能描述:IGBT 晶體管 600V/50A DIS+FRD RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
GT50J325_06 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon N Channel IGBT High Power Switching Applications |
GT50J325Q | 制造商:Toshiba America Electronic Components 功能描述:Trans IGBT Chip N-CH 600V 50A 3-Pin TO-3P(LH) 制造商:Toshiba 功能描述:Trans IGBT Chip N-CH 600V 50A 3-Pin TO-3P(LH) |
GT50J327 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT Current Resonance Inverter Switching Application |
GT50J327(Q) | 制造商:Toshiba America Electronic Components 功能描述: |