型號: | GT10J311 |
元件分類: | 開關(guān) |
英文描述: | TOGGLE SWITCH, DP3T, MOMENTARY, 4A, 28VDC, PANEL MOUNT-THREADED |
文件頁數(shù): | 4/7頁 |
文件大?。?/td> | 525K |
代理商: | GT10J311 |
相關(guān)PDF資料 |
PDF描述 |
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GT8N101 | TOGGLE SWITCH, DP3T, MOMENTARY, 4A, 28VDC, PANEL MOUNT-THREADED |
GA200DD120U | TOGGLE SWITCH, DP3T, MOMENTARY, 4A, 28VDC, PANEL MOUNT-THREADED |
GA1F4N | TOGGLE SWITCH, DP3T, MOMENTARY, 4A, 28VDC, PANEL MOUNT-THREADED |
GN1L4ZM61-T2 | TOGGLE SWITCH, DP3T, MOMENTARY, 4A, 28VDC, PANEL MOUNT-THREADED |
GN1L4ZM62-T2 | TOGGLE SWITCH, DP3T, MOMENTARY, 4A, 28VDC, PANEL MOUNT-THREADED |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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GT10J312 | 制造商:Toshiba America Electronic Components 功能描述:Trans IGBT Chip N-CH 600V 10A 3-Pin(3+Tab) TO-220FL 制造商:Toshiba America Electronic Components 功能描述:TRANS IGBT CHIP N-CH 600V 10A 3PIN TO-220SM - Rail/Tube |
GT10J312(Q) | 功能描述:IGBT 晶體管 IGBT, 600V, 10A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
GT10J312(SM) | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) |
GT10J312(TE24R) | 制造商:Toshiba America Electronic Components 功能描述:Trans IGBT Chip N-CH 600V 10A 3-Pin(3+Tab) TO-220FL T/R 制造商:Toshiba America Electronic Components 功能描述:TRANS IGBT CHIP N-CH 600V 10A 3PIN TO-220SM - Tape and Reel |
GT10J312_06 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS |