參數(shù)資料
型號(hào)： GSS6982
廠商： GTM CORPORATION
英文描述： DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET
中文描述： 雙N溝道增強(qiáng)型功率MOSFET
文件頁數(shù)： 1/7頁
文件大?。?/td> 511K
代理商： GSS6982
GSS6982
Page: 1/7
ISSUED DATE :2006/04/24
REVISED DATE :
G
G S
S S
S 66998822
DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Description
The GSS6982 provide the designer with the best combination of fast switching, ruggedized device design, ultra
low on-resistance and cost-effectiveness.
Features
*Low On-resistance
*Fast Switching
Package Dimensions
Millimeter
REF.
Min.
Max.
REF.
Min.
Max.
A
5.80
6.20
M
0.10
0.25
B
4.80
5.00
H
0.35
0.49
C
3.80
4.00
L
1.35
1.75
D
0°
8°
J
0.375 REF.
E
0.40
0.90
K
45°
F
0.19
0.25
G
1.27 TYP.
Absolute Maximum Ratings
Ratings
Parameter
Symbol
CH-1
CH-2
Unit
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
±25
V
Continuous Drain Current3
ID @TA=25 :
8.5
7.3
A
Continuous Drain Current3
ID @TA=70 :
6.8
5.8
A
Pulsed Drain Current1
IDM
30
A
Total Power Dissipation
PD @TA=25 :
2.0
W
Linear Derating Factor
0.016
W/ :
Operating Junction and Storage Temperature Range
Tj, Tstg
-55 ~ +150
:
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance Junction-ambient3
Max.
Rthj-a
62.5
/
: W
Pb Free Plating Product
CH1 BVDSS
30V
N-CH RDS(ON) 18m
N-CH ID
8.5A
CH2 BVDSS
30V
N-CH RDS(ON) 26m
N-CH ID
7.3A
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