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參數(shù)資料
| 型號(hào)： | GSN217U |
| 廠商： | GTM CORPORATION |
| 英文描述： | SURFACE MOUNT, SWITCHING DIODE |
| 中文描述： | 表面貼裝，開關(guān)二極管 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 150K |
| 代理商： | GSN217U |
1/2
ISSUED DATE :2004/09/24
REVISED DATE :
G
G S
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N 221177U
U
S
S U
U R
R F
F A
A C
C E
E M
M O
O U
U N
N T
T ,, S
S W
W II T
T C
C H
H II N
N G
G D
D II O
O D
D E
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V O L T A G E 8 0 V, C U R R E N T 0 . 1 A
Description
The GSN217U is designed for ultra high speed switching.
Package Dimensions
Millimeter
REF.
Min.
Max.
REF.
Min.
Max.
A
0.80
1.10
L1
0.42 REF.
A1
0
0.10
L
0.15
0.35
A2
0.80
1.00
b
0.25
0.40
D
1.80
2.20
c
0.10
0.25
E
1.15
1.35
e
0.65 REF.
HE
1.80
2.40
Q1
0.15 BSC.
:
Parameter
Symbol
Ratings
Unit
Junction Temperature
Tj
+150
Storage Temperature
Tstg
-55 ~ +150
Maximum Peak Repetitive Reverse Voltage
VRRM
80
V
Maximum RMS Voltage
VRMS
56
V
Maximum DC Blocking Voltage
VDC
80
V
Peak Forward Surge Current at 1uSec
IFSM
4.0
A
Typical Junction Capacitance between Terminal (Note 1)
CJ
2.0
pF
Maximum Average Forward Rectified Current
Io
0.1
A
Total Power Dissipation
PD
225
mW
Characteristics at Ta = 25 ::::
Characteristics
Symbol
Typ.
Unit
Test Condition
Maximum Instantaneous Forward Voltage
VF
1.20
V
IF = 100mA
Maximum Average Reverse Current
IR
0.2
uA
VR = 70V
Notes: 1. Measured at 1.0 MHz and applied reverse voltage of 6.0 volt.
2. ESD sensitive product handling required.
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