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參數(shù)資料
| 型號： | GSMBD4148 |
| 廠商： | GTM CORPORATION |
| 英文描述： | SURFACE MOUNT, SWITCHING DIODE |
| 中文描述： | 表面貼裝，開關二極管 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 291K |
| 代理商： | GSMBD4148 |
1/2
ISSUED DATE :2004/12/13
REVISED DATE :
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S U
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F A
A C
C E
E M
M O
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N T
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C H
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Description
The GSMBD4148 is designed for high-speed switching application in hybrid thick and thin-film circuits. The devices is manufactured by the
silicon epitaxial planar process and packed in plastic surface mount package.
Package Dimensions
Millimeter
REF.
Min.
Max.
REF.
Min.
Max.
A
0.80
1.10
L1
0.42 REF.
A1
0
0.10
L
0.15
0.35
A2
0.80
1.00
b
0.25
0.40
D
1.80
2.20
c
0.10
0.25
E
1.15
1.35
e
0.65 REF.
HE
1.80
2.40
Q1
0.15 BSC.
Absolute Maximum Ratings at Ta = 25 ::::
Parameter
Symbol
Ratings
Unit
Junction Temperature
Tj
+150
Storage Temperature
Tstg
-65 ~ +150
Maximum Peak Reverse Voltage
VRM
100
V
Maximum Reverse Voltage
VR
75
V
Average Forward Current
IO
200
mA
Surge Current(1us)
IFSM
2
A
Typical Junction Capacitance between Terminal (Note 1)
CJ
4.0
pF
Maximum Reverse Recovery Time (Note2)
TRR
4.0
nSec
Total Power Dissipation
PD
225
mW
Electrical Characteristics at Ta = 25 ::::
Characteristic
Symbol
Min.
Max.
Unit
Test Conditions
Forward Voltage
VF
-
1
V
IF=10mA
Reverse Breakdown
VR
100
-
V
IR=100uA
Reverse Current
IR
-
5
uA
VR=75V
Notes: 1. Measured at 1.0 MHz and applied reverse voltage of 0 volt.
2. Measured at applied forward current of 10mA, reverse current of 1.0mA, Reverse voltage of 6.0volt and RL=100
.
3. ESD sensitive product handling required.
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| GSMBT1815 | 制造商:GTM 制造商全稱:GTM 功能描述:NPN EPITAXIAL PLANAR TRANSISTOR |
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| GSMBT2222A | 制造商:GTM 制造商全稱:GTM 功能描述:NPN EPITAXIAL PLANAR TRANSISTOR |
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