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參數(shù)資料
| 型號(hào)： | GSDS50020 |
| 英文描述： | TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 50A I(C) | TO-3 |
| 中文描述： | 晶體管|晶體管| npn型| 200伏五（巴西）總裁| 50A條一（c）|至3 |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大小： | 50K |
| 代理商： | GSDS50020 |
Data S heet No. GS DS 50018 &
GS DS 50020
Generic Part Number:
GSDS50018 & GSDS50020
Features:
High Voltage
High Gain
High Current
Low Saturation Voltages
Fast Switching
Radiation Resistant
Applications:
High Speed Switching
Power Conversion
Converters
Inverters
Class D Amplifiers
Class C Amplifiers
S
surface stabilization for high voltage operation and enhances long term reliability. A
design feature is the use of an interdigital emitter providing a periphery greater than
7.0 inches. This improves both the gain and current handling capability.
emicoa’s GSD series is a family of NPN silicon transistors designed for high
speed switching systems. This unique series utilizes technology that provides
These transistors have been specifically designed and engineered for high speed,
high voltage switching applications where the designer is concerned with optimizing
power conversion efficiency.
High Power NPN Transistors
180 V & 200 V, 50 Amp Switching
TO-3
(TO-2004AE) Case
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