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參數(shù)資料
| 型號： | GSBAW56 |
| 廠商： | GTM CORPORATION |
| 英文描述： | SURFACE MOUNT, SWITCHING DIODE |
| 中文描述： | 表面貼裝，開關(guān)二極管 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 130K |
| 代理商： | GSBAW56 |
CORPORATION
GSBAW56
Page: 1/2
ISSUED DATE :2005/12/23
REVISED DATE :
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F A
A C
C E
E M
M O
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Description
The GSBAW56 consists of two high-speed switching diodes with common anodes, fabricated in planar
technology, and encapsulated in a small SOT-323 plastic SMD package.
Package Dimensions
Millimeter
REF.
Min.
Max.
REF.
Min.
Max.
A
0.80
1.10
L1
0.42 REF.
A1
0
0.10
L
0.15
0.35
A2
0.80
1.00
b
0.25
0.40
D
1.80
2.20
c
0.10
0.25
E
1.15
1.35
e
0.65 REF.
HE
1.80
2.40
Q1
0.15 BSC.
Absolute Maximum Ratings at TA = 25 ::::
Parameter
Symbol
Ratings
Unit
Junction Temperature
Tj
+125
:
Storage Temperature
Tstg
-65 ~ +150
:
Repetitive Peak Reverse Voltage
VRRM
85
V
Continuous Reverse Voltage
VR
75
V
single diode loaded (note1)
150
Continuous Forward Current
double diode loaded (note1)
IF
130
mA
Repetitive Peak Forward Current
IFRM
500
mA
Non-Repetitive Peak Forward Current (1ms)
IFSM
1
A
Total Power Dissipation
PD
250
mW
Notes: 1. Device mounted on an FR4 printed-circuit board.
Electrical Characteristics (at TA = 25 : unless otherwise noted)
Parameter
Symbol
Min.
Max.
Unit
Test Conditions
Reverse Voltage
VR
85
-
V
IR=100uA
VF(1)
-
715
mV
IF=1mA
VF(2)
-
855
mV
IF=10mA
VF(3)
-
1000
mV
IF=50mA
Forward Voltage
VF(4)
-
1250
mV
IF=150mA
Reverse Current
IR
-
1
uA
VR=80V
Diode Capacitance
CD
2
pF
VR=0, f=1MHz
Reverse Recovery Time
Trr
-
4
nS
IF=IR=10mA, RL=100 measured at IR=1mA
1
2
3
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